Search Results1-20 of  22

  • 1 / 2
  • ODA Hidekazu ID: 9000001496371

    Renesas Technology Corporation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • ODA Hidekazu ID: 9000002177399

    Process Technology Development Div., Renesas Technology Corp. (2007 from CiNii)

    Articles in CiNii:1

    • Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process (2007)
  • ODA Hidekazu ID: 9000107305912

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • Oda Hidekazu ID: 9000068434229

    Articles in CiNii:1

    • Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors (2012)
  • Oda Hidekazu ID: 9000072238557

    Articles in CiNii:1

    • Stress from Discontinuous SiN Liner for Fully Silicided Gate Process (2008)
  • Oda Hidekazu ID: 9000079998917

    Articles in CiNii:1

    • A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology (2008)
  • Oda Hidekazu ID: 9000258166279

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • Oda Hidekazu ID: 9000258180441

    Renesas Technology Corperation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • Oda Hidekazu ID: 9000304970474

    Low-power Electronics Association & Project(LEAP) (2014 from CiNii)

    Articles in CiNii:1

    • A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology (2014)
  • Oda Hidekazu ID: 9000304970717

    Low-power Electronics Association & Project(LEAP) (2014 from CiNii)

    Articles in CiNii:1

    • A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology (2014)
  • Oda Hidekazu ID: 9000401714979

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • Oda Hidekazu ID: 9000401735500

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • Oda Hidekazu ID: 9000401778313

    Articles in CiNii:1

    • 2009-04-20 (2009)
  • Oda Hidekazu ID: 9000401778326

    Articles in CiNii:1

    • 2009-04-20 (2009)
  • Oda Hidekazu ID: 9000401786394

    Articles in CiNii:1

    • 2010-04-20 (2010)
  • Oda Hidekazu ID: 9000401786507

    Articles in CiNii:1

    • Temperature Coefficient of Threshold Voltage in High-kMetal Gate Transistors with Various TiN and Capping Layer Thicknesses (2010)
  • Oda Hidekazu ID: 9000401990394

    Articles in CiNii:1

    • Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor (2015)
  • Oda Hidekazu ID: 9000402008025

    Articles in CiNii:1

    • Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors (2012)
  • Oda Hidekazu ID: 9000402013440

    Articles in CiNii:1

    • 2013-04-01 (2013)
  • Oda Hidekazu ID: 9000402021472

    Articles in CiNii:1

    • Speed enhancement atVdd= 0.4 V and random τpdvariability reduction and analyisis of τpdvariability of silicon on thin buried oxide circuits (2014)
  • 1 / 2
Page Top