Search Results1-12 of  12

  • OGASAWARA Satoru ID: 9000000227074

    Microelectronics Research Center, SANYO Electric Co., Ltd. (1996 from CiNii)

    Articles in CiNii:2

    • Low-Temperature Oxidation of Silicon by O_2 Cluster Ion Beams (1996)
    • A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams (1995)
  • OGASAWARA Satoru ID: 9000004824568

    R&D Association for Future Electron Devices:Frontier Collaborative Research Center, Tokyo Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell (2001)
  • OGASAWARA Satoru ID: 9000004970388

    R&D Association for Future Electron Devices:Frontier Collaborative Research Center, Tokyo Institute of Technology (2002 from CiNii)

    Articles in CiNii:1

    • 1T2C-type Ferroelectric Memory (2002)
  • OGASAWARA Satoru ID: 9000006470180

    R&D Association for Future Electron Devices (2002 from CiNii)

    Articles in CiNii:1

    • Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell with Local Interconnections (2002)
  • Ogasawara Satoru ID: 9000005052049

    Articles in CiNii:42

    • 400万画素CCD-DRにおける2000本CRT画像の画質評価 (特集 デジタルラジオグラフィー--その最新の知見と今後の動向) (2000)
    • Evaluation of Image Quality on CRT in DR Usin 4 million Pixel CCD (1998)
    • 158 400万画素CCD-DRにおける2000本CRT画像の画質評価 (1999)
  • Ogasawara Satoru ID: 9000240022745

    Faculty of Economics, Oita University (2013 from CiNii)

    Articles in CiNii:1

    • Global Financial Crisis and International Capital Flows (2013)
  • Ogasawara Satoru ID: 9000258131202

    Microelectronics Research Center, SANYO Electric Co., Ltd., 180 Ohmori, Anpachi–cho, Anpachi–gun, Gifu 503–01, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Oxidation of Silicon by O2 Cluster Ion Beams. (1996)
  • Ogasawara Satoru ID: 9000258159491

    R&D Association for Future Electron Devices, 1-10-14 Kitaueno Taito-ku, Tokyo 110-0014, Japan|Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku, Yokohama 226-8503, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell with Local Interconnections. (2002)
  • Ogasawara Satoru ID: 9000401655456

    Articles in CiNii:1

    • Low-Temperature Oxidation of Silicon byO2Cluster Ion Beams (1996)
  • Ogasawara Satoru ID: 9000401710720

    Articles in CiNii:1

    • Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell with Local Interconnections (2002)
  • Ogasawara Satoru ID: 9000403154803

    Faculty of Economics, Oita University (2016 from CiNii)

    Articles in CiNii:1

    • International portfolio flows in the post-global financial crisis period (2016)
  • Satoru Ogasawara ID: 9000002658707

    Articles in CiNii:4

    • Formal approach to systems analysis (1962)
    • 電子計算組織導入の資料 (1963)
    • 管理科学科創設の頃 (〔神戸商科大学〕管理科学科創立40周年記念号) (2004)
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