Search Results1-20 of  64

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  • OGAWA Matsuto ID: 9000004821992

    Department of Electrical and Electronics Engineering, Kobe University (2003 from CiNii)

    Articles in CiNii:3

    • Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (2003)
    • Simulation of Multi-Band Quantum Transport Reflecting Realistic Band Strucuture (2000)
    • Quantum Electron Transport Modeling in Nano-Scale Devices (2003)
  • OGAWA Matsuto ID: 9000005567520

    Department of Electrical and Electronics Engineering, Kobe University (1995 from CiNii)

    Articles in CiNii:1

    • Valence-Subband Structure of Strained Quantum Wells (1995)
  • OGAWA Matsuto ID: 9000005737735

    Department of Electrical and Electronics Engineering, Kobe University (1995 from CiNii)

    Articles in CiNii:1

    • Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect (1995)
  • OGAWA Matsuto ID: 9000006916140

    Graduate School of Engineering, Kobe University (2011 from CiNii)

    Articles in CiNii:4

    • First-Principles Simulation of Electronic Bandstructures of Nanoscaled-Si Channels with Strain Effects (2008)
    • Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors (2008)
    • Report on 2009 SISPAD (2) (2009)
  • OGAWA Matsuto ID: 9000017683194

    Department of Electronics and Electrical Engineering, Kobe University (2008 from CiNii)

    Articles in CiNii:1

    • Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method (2008)
  • OGAWA Matsuto ID: 9000019140918

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University (2012 from CiNii)

    Articles in CiNii:1

    • Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation (2012)
  • OGAWA Matsuto ID: 9000107315750

    Graduate School of Engineering, Kobe University (2011 from CiNii)

    Articles in CiNii:1

    • Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation (2011)
  • OGAWA Matsuto ID: 9000107345479

    Department of Electrical and Electronics Engineering, Kobe University (2005 from CiNii)

    Articles in CiNii:1

    • Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors (2005)
  • OGAWA Matsuto ID: 9000107355380

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University (2011 from CiNii)

    Articles in CiNii:1

    • Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors (2011)
  • OGAWA Matsuto ID: 9000240063135

    神戸大学大学院工学研究科 (2013 from CiNii)

    Articles in CiNii:1

    • Faculty Development in Faculty of Engineering, Kobe University (2013)
  • OGAWA Matsuto ID: 9000258739845

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University (2013 from CiNii)

    Articles in CiNii:1

    • Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit (2013)
  • OGAWA Matsuto ID: 9000261681172

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University (2013 from CiNii)

    Articles in CiNii:1

    • Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor Field-Effect Transistors (2013)
  • Ogawa Matsuto ID: 9000002232722

    Graduate School of Engineering, Kobe University (2014 from CiNii)

    Articles in CiNii:16

    • Quantum Transport in Carbon Nanotubes with Arbitrary Chirality (2003)
    • Quantun Mechanical Simulation of Current Noise in Nano-scale MOSFETs (2006)
    • グレ-デッドギャップヘテロ接合APDの解析 (1988)
  • Ogawa Matsuto ID: 9000002290818

    Division of Mathematical and Material Science, Graduate School of Science and Technology, Kobe University (2004 from CiNii)

    Articles in CiNii:1

    • Quantum Transport in Carbon Nanotubes with Arbitrary Chirality (2004)
  • Ogawa Matsuto ID: 9000071673741

    Articles in CiNii:1

    • Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels (2012)
  • Ogawa Matsuto ID: 9000237752217

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University (2012 from CiNii)

    Articles in CiNii:1

    • 26pPSB-61 Effect of axial strain on electronic transport in carbon nanotube tunneling field effect transistors (2012)
  • Ogawa Matsuto ID: 9000239596822

    Articles in CiNii:1

    • Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire (2009)
  • Ogawa Matsuto ID: 9000239596825

    Articles in CiNii:1

    • Quantum Transport Simulation of Silicon-Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation (2009)
  • Ogawa Matsuto ID: 9000239596828

    Articles in CiNii:1

    • A first principles study on tunneling current through Si/SiO2/Si structures (2009)
  • Ogawa Matsuto ID: 9000239597443

    Articles in CiNii:1

    • Finite-element analysis of quantum wires with arbitrary cross sections (1998)
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