Search Results1-20 of  191

  • Ogura Atsushi ID: 9000024979859

    Articles in CiNii:1

    • Quantitative analysis of stress relaxation in transmission electron microscopy samples by Raman spectroscopy with a high-numerical aperture lens (Special issue: Solid state devices and materials) (2011)
  • Ogura Atsushi ID: 9000399816721

    Articles in CiNii:1

    • Clinical value of enzyme immunoassay that detects rubella-specific immunoglobulin M immediately after disease onset (2019)
  • Ogura Atsushi ID: 9000403084335

    Articles in CiNii:1

    • Experimental Approach Reveals the Role of alx1 in the Evolution of the Echinoderm Larval Skeleton (2016)
  • OGURA Atsushi ID: 9000001227657

    Semiconductor Technology Academic Research Center (2004 from CiNii)

    Articles in CiNii:1

    • Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams (2004)
  • OGURA Atsushi ID: 9000001454040

    Meiji University (2012 from CiNii)

    Articles in CiNii:4

    • Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel (2005)
    • Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF_3)_4 and Si_3H_8 (2007)
    • Composition control of Ni-silicide by CVD using Ni(PF_3)_4 and Si_3H_8 (2005)
  • OGURA Atsushi ID: 9000001506077

    Silicon Systems Res. Labs, NEC Corp. (2001 from CiNii)

    Articles in CiNii:1

    • Novel SOI Fabrication Process by Light Ion Implantation and Annealing in Oxygen Including Atmosphere (2001)
  • OGURA Atsushi ID: 9000001716704

    Microelectronics Research Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Precise Measurement of Strain in SOI Induced by Local Oxidation (1997)
  • OGURA Atsushi ID: 9000001718299

    Silicon Systems Research Laboratories, NEC Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+ Splitting (1998)
  • OGURA Atsushi ID: 9000001719851

    Silicon Systems Res. Labs., System Devices and Fundamental Res., NEC Corp. (2000 from CiNii)

    Articles in CiNii:1

    • Evaluation of SOI Substrates by Positron Annihilation (2000)
  • OGURA Atsushi ID: 9000001720376

    Microelectronics Research Laboratories, NEC Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching (1996)
  • OGURA Atsushi ID: 9000002165514

    Silicon Systems Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Measurement of As and B Profiles Implanted into SOI Substrates (1999)
  • OGURA Atsushi ID: 9000002167532

    Meiji University, School of Science and Engineering (2004 from CiNii)

    Articles in CiNii:1

    • Depth Profiling of Si/Si_<1-x>Ge_x Structures by Micro-Raman Imaging (2004)
  • OGURA Atsushi ID: 9000002170239

    School of Science and Engineering, Meiji University (2005 from CiNii)

    Articles in CiNii:1

    • UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si (2005)
  • OGURA Atsushi ID: 9000002176074

    School of Science and Technology, Meiji University (2007 from CiNii)

    Articles in CiNii:1

    • Characterization of Strain in Si for High Performance MOSFETs (2007)
  • OGURA Atsushi ID: 9000004190660

    Institute of Molecular and Cellular Biosciences, The University of Tokyo (2000 from CiNii)

    Articles in CiNii:3

    • Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy (1997)
    • Group I Intron Located in PR Protein Homologue Gene in Youngia japonica (2000)
    • Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy (1998)
  • OGURA Atsushi ID: 9000004739526

    NTT DoCoMo. Inc. (2004 from CiNii)

    Articles in CiNii:3

    • 移動体通信における遺伝アルゴリズムを用いた高効率な固定チャネル割当法の検討 (2003)
    • Study on Combination Channel Assignment Method Using the Genetic Algorithm in the Mobile Communications (2004)
    • Study on Fixed Channel Allocation Method Using the Genetic Algorithm with The Random Search in Mobile Communications (2003)
  • OGURA Atsushi ID: 9000005588595

    Silicon Systems Research Laboratories, NEC Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures (1998)
  • OGURA Atsushi ID: 9000005671724

    NEC Corp., Microelectronics Research Laboratories (1996 from CiNii)

    Articles in CiNii:1

    • Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltage during KOH Etching (1996)
  • OGURA Atsushi ID: 9000005688143

    Silicon Systems Research Laboratories, NEC Corp. (1998 from CiNii)

    Articles in CiNii:1

    • Defect Analysis in Bonded and H^+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy (1998)
  • OGURA Atsushi ID: 9000005718222

    NEC Corporation, Microelectronics Research Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching:Improvement of Thickness Variation by Reducing Leakage Current (1997)
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