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  • Ohdaira Keisuke ID: 9000024967086

    Articles in CiNii:1

    • Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization (Special Issue : Photovoltaic Science and Engineering) (2012)
  • Ohdaira Keisuke ID: 9000024979752

    Articles in CiNii:1

    • Microstructure of polycrystalline silicon films formed through explosive crystallization induced by flash lamp annealing (Special issue: Solid state devices and materials) (2011)
  • Ohdaira Keisuke ID: 9000024987857

    Articles in CiNii:1

    • High-quality polycrystalline silicon films with minority carrier lifetimes over 5μs formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition (2007)
  • Ohdaira Keisuke ID: 9000025017473

    Articles in CiNii:1

    • Selection of material for the back electrodes of thin-film solar cells using polycrystalline silicon films formed by flash lamp annealing (Special issue: Solid state devices and materials) (2010)
  • Ohdaira Keisuke ID: 9000298893222

    Articles in CiNii:1

    • Enhancement of Photoresist Removal Rate by Using Atomic Hydrogen Generated under Low-pressure Conditions (2015)
  • OHDAIRA Keisuke ID: 9000001626644

    Institute for Materials Research (IMR), Tohoku University (2005 from CiNii)

    Articles in CiNii:1

    • Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration (2005)
  • OHDAIRA Keisuke ID: 9000003248832

    Department of Applied Physics, The University of Tokyo (2004 from CiNii)

    Articles in CiNii:2

    • Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots (2003)
    • Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (2004)
  • OHDAIRA Keisuke ID: 9000016377908

    Japan Advanced Institute of Science and Technology (JAIST) (2009 from CiNii)

    Articles in CiNii:1

    • Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films (2009)
  • OHDAIRA Keisuke ID: 9000018468546

    School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST) (2010 from CiNii)

    Articles in CiNii:2

    • Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing (2010)
    • Formation of several-micrometer-thick polycrystalline silicon films on soda lime glass by flash lamp annealing (2008)
  • OHDAIRA Keisuke ID: 9000018630837

    Articles in CiNii:7

    • Formation of High-quality Poly-Si Films by Flash Lamp Annealing (2008)
    • Thin-film Formation by Catalytic Chemical Vapor Deposition(Cat-CVD) (2010)
    • CMOS ISFET Sensor Array with Catalytic Chemical Vapor Deposited Silicon Nitride Layer and Its Medical Applications (2011)
  • OHDAIRA Keisuke ID: 9000107345364

    Institute for Materials Research (IMR), Tohoku University (2005 from CiNii)

    Articles in CiNii:1

    • Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe (2005)
  • OHDAIRA Keisuke ID: 9000248222584

    Green Devices Research Center, Japan Advanced Institute of Science and Technology (2012 from CiNii)

    Articles in CiNii:1

    • Formation of Polycrystalline Silicon Films for Solar Cells by Flash Lamp Annealing (2012)
  • OHDAIRA Keisuke ID: 9000392783743

    Japan Advanced Institute of Science and Technology (JAIST) (2017 from CiNii)

    Articles in CiNii:1

    • Formation of High-Quality Passivation Films for Solar Cells by Cat-CVD (2017)
  • Ohdaira Keisuke ID: 9000022759991

    Articles in CiNii:1

    • Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films (2010)
  • Ohdaira Keisuke ID: 9000022804222

    Articles in CiNii:1

    • Novel technique for formation of metal lines by functional liquid containing metal nanoparticles and reduction of their resistivity by hydrogen treatment (2010)
  • Ohdaira Keisuke ID: 9000022804694

    Articles in CiNii:1

    • Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes (2010)
  • Ohdaira Keisuke ID: 9000023266293

    Articles in CiNii:1

    • Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films (2008)
  • Ohdaira Keisuke ID: 9000023267131

    Articles in CiNii:1

    • Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing (2009)
  • Ohdaira Keisuke ID: 9000023268413

    Articles in CiNii:1

    • Formation of highly uniform micrometer-order-thick polycrystalline silicon films by flash lamp annealing of amorphous silicon on glass substrates (2007)
  • Ohdaira Keisuke ID: 9000023334650

    Articles in CiNii:1

    • Advantage of plasma-less deposition: Cat-CVD fabrication of a-Si TFT with current drivability equivalent to poly-Si TFT (2010)
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