Search Results1-20 of  46

  • 1 / 3
  • Ohdaira Toshiyuki ID: 9000025085742

    Articles in CiNii:1

    • Reemission of Positrons from Mesh and Powder Moderators (2005)
  • Ohdaira Toshiyuki ID: 9000403857657

    Articles in CiNii:1

    • Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams (2003)
  • OHDAIRA TOSHIYUKI ID: 9000392116810

    Advanced Industrial Science and Technology (2011 from CiNii)

    Articles in CiNii:1

    • Effect of vacancy defects on hydrogen behavior in oxide layer of Zr-based alloys (2011)
  • OHDAIRA Toshiyuki ID: 9000107341467

    National Institute of Advanced Industrial Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor (2005)
  • OHDAIRA Toshiyuki ID: 9000107346393

    National Institute of Advanced Industrial Science and Technology (2004 from CiNii)

    Articles in CiNii:1

    • Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams (2004)
  • OHDAIRA Toshiyuki ID: 9000253647887

    Department of Nuclear Engineering,Kyoto University (1991 from CiNii)

    Articles in CiNii:1

    • Charge changing collision process and solid surface. (1991)
  • OHDAIRA Toshiyuki ID: 9000253649872

    Electrotechnical Laboratory (1999 from CiNii)

    Articles in CiNii:1

    • Surface Top-Layer Analysis by Positron-Annihilation Induced Auger-Electron Spetroscopy. (1999)
  • OHDAIRA Toshiyuki ID: 9000253649896

    Electrotechnical Laboratory (1999 from CiNii)

    Articles in CiNii:1

    • Generation of Slow-Positron Beams and Their Applications to Surface Studies. (1999)
  • OHDAIRA Toshiyuki ID: 9000404508863

    Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Characterization of advanced semiconductor materials by positron annihilation (2005)
  • Ohdaira Toshiyuki ID: 9000025119594

    Articles in CiNii:1

    • Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing (2006)
  • Ohdaira Toshiyuki ID: 9000047140601

    Articles in CiNii:1

    • Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams (2007)
  • Ohdaira Toshiyuki ID: 9000047372184

    Articles in CiNii:1

    • Characterization of Low-k/Cu Damascene Structures Using Monoenergetic Positron Beams (2009)
  • Ohdaira Toshiyuki ID: 9000055407452

    Articles in CiNii:1

    • Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C(000\bar1)- and Si(0001)-Faces (2008)
  • Ohdaira Toshiyuki ID: 9000061628405

    Articles in CiNii:1

    • Characterization of Metal/High-kStructures Using Monoenergetic Positron Beams (2007)
  • Ohdaira Toshiyuki ID: 9000247083938

    Department of Nuclear Engineering, Kyoto University (1989 from CiNii)

    Articles in CiNii:1

    • 28p-M-4 Charge state distributions of H ions passing through solids (1989)
  • Ohdaira Toshiyuki ID: 9000258126600

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Postiron Beams. (1995)
  • Ohdaira Toshiyuki ID: 9000258133823

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams. (1997)
  • Ohdaira Toshiyuki ID: 9000258135535

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Fluorine-Related Defects in BF+2-Implanted Si Probed by Monoenergetic Positron Beams. (1997)
  • Ohdaira Toshiyuki ID: 9000258141735

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Investigation of Vacancy-Type Defects in P+-Implanted 6H-SiC Using Monoenergetic Positron Beams. (1998)
  • Ohdaira Toshiyuki ID: 9000258142762

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Defects in Ion Implanted Hg0.78Cd0.22Te Probed by Monoenergetic Positron Beams (1998)
  • 1 / 3
Page Top