Search Results1-20 of  37

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  • Ohfuji Takeshi ID: 9000009563552

    Articles in CiNii:1

    • Swelling Analysis of Methacrylate Polymers in Aqueous Alkaline Developer (1999)
  • Ohfuji Takeshi ID: 9000009564931

    Articles in CiNii:1

    • Cyclization Reaction in Acrylonitrile-contained Acrylic Copolymers and Its Possible Application for the Improvement of Dry Etch Resitance for Photoresists (1998)
  • OHFUJI Takeshi ID: 9000000191473

    Functional Devices Research Laboratories, NEC Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Chemically Amplified Resist for ArF Excimer Laser Lithography Composed of an Alkylsulfonium Salt Photoacid Generator and an Alicyclic Terpolymer (1996)
  • OHFUJI Takeshi ID: 9000004965860

    Association of Super-Advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:4

    • Micro-Processing by ArF Excimer Laser (1998)
    • Limitation of KrF lithography and recent advancement in ArF lithography (1997)
    • Current Status and Future prospect of ArF Excimer Laser Lithogaprhy (1996)
  • OHFUJI Takeshi ID: 9000005593316

    Articles in CiNii:13

    • 193nm Lithography with Novel Highly Transparent Acid Amplifier for Chemically Amplified Resists (1999)
    • Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography (1997)
    • Effects of Photoacid Generator Concentration and Post-Exposure Bake Temperature on Dissolution Behavior of ArF Excimer Laser Resists (1999)
  • OHFUJI Takeshi ID: 9000254934338

    Functional Devices Research Laboratories, NEC Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Chemically Amplified Resist for ArF Excimer Laser Lithography Composed of an Alkylsulfonium Salt Photoacid Generator and an Alicyclic Terpolymer. (1996)
  • Ohfuji Takeshi ID: 9000004967441

    NEC Corp. (1994 from CiNii)

    Articles in CiNii:1

    • ArF Excimer Laser Lithography using Top Surface Imaging (1994)
  • Ohfuji Takeshi ID: 9000252759095

    VLSI Development Division, NEC Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Polyvinyl Alcohol Film Coating Effect on Novolac-Based Positive Electron Resist Sensitivity in X-Ray Lithography in an Atmospheric Environment (1985)
  • Ohfuji Takeshi ID: 9000252776266

    Semiconductor Leading Edge Technologies, Inc., Advanced Research Department (1999 from CiNii)

    Articles in CiNii:1

    • Swelling Analysis of Methacrylate Polymers in Aqueous Alkaline Developer (1999)
  • Ohfuji Takeshi ID: 9000252776936

    Functional Devices Research Laboratories, NEC Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Design and Characterization of Alicyclic Polymers with Alkoxy-ethyl Protecting Groups for ArF Chemically Amplified Resists. (1996)
  • Ohfuji Takeshi ID: 9000253027982

    Assoctalion of Super-Advanced Electronics Technologies (1997 from CiNii)

    Articles in CiNii:1

    • Novel Resist Materials Using Acid Amplifiers. Part II. (1997)
  • Ohfuji Takeshi ID: 9000253027988

    Association of Super-Advanced Electronics Technologies(ASET) (1997 from CiNii)

    Articles in CiNii:1

    • Novel Resist Materials Using Acid Amplifiers Part I. (1997)
  • Ohfuji Takeshi ID: 9000253028265

    Association of Super-Advanced Electronics Technologies (ASET) (1997 from CiNii)

    Articles in CiNii:1

    • Chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process. (1997)
  • Ohfuji Takeshi ID: 9000253028285

    ASET (1997 from CiNii)

    Articles in CiNii:1

    • Characterization of Chemically Amplified Resists with "Acid Amplifier" for 193 nm Lithography. (1997)
  • Ohfuji Takeshi ID: 9000253028583

    Yokohama Research Center Association of Super Advanced Electronics Technologies (1998 from CiNii)

    Articles in CiNii:1

    • Divinyloxyalkane Cross-linker on DUV Photoresist. (1998)
  • Ohfuji Takeshi ID: 9000253028597

    Association of Super-Advanced Electronics Technologies (1998 from CiNii)

    Articles in CiNii:1

    • Cyclization Reaction in Acrylonitrile-Contained Acrylic Copolymers and Its Possible Application for the Improvement of Dry Etch Resistance for Photoresists. (1998)
  • Ohfuji Takeshi ID: 9000253028743

    Association of Super-advanced Electronics Technologies (ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Bilayer resists process for ArF lithography. (1998)
  • Ohfuji Takeshi ID: 9000253028996

    Semiconductor Leading Edge Technologies, Inc. (SELETE) (1999 from CiNii)

    Articles in CiNii:1

    • Synthesis and Characteristics of a Novel Acid Amplifier with a Low Absorbance at 193nm (1999)
  • Ohfuji Takeshi ID: 9000253029169

    Semiconductor Leading Edge Technologies, Inc. (Selete) (1999 from CiNii)

    Articles in CiNii:1

    • 193nm Lithography with Novel Highly Transparent Acid Amplifier for Chemically Amplified Resist. (1999)
  • Ohfuji Takeshi ID: 9000253029292

    Semiconductor Leading Edge Technologies, Inc. (Selete) (1999 from CiNii)

    Articles in CiNii:1

    • Effects of Photoacid Generator Concentration and Post-Exposure Bake Temperature on Dissolution Behavior of ArF Excimer Laser Resists. (1999)
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