Search Results1-9 of  9

  • OOTSUKA Fumio ID: 9000001496598

    Semiconductor Leading Edge Technologies Inc. (2005 from CiNii)

    Articles in CiNii:3

    • Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks (2005)
    • Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks (2004)
    • Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing (2004)
  • OOTSUKA Fumio ID: 9000002169399

    Semiconductor Leading Edge Technologies (Selete), AIST (2005 from CiNii)

    Articles in CiNii:1

    • Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics (2005)
  • OOTSUKA Fumio ID: 9000004964674

    Semiconductor Leading Edge Technologies, Inc. (Selete) (2006 from CiNii)

    Articles in CiNii:7

    • ゲート絶縁膜国際ワークショップ(IWGI 2003)会合報告 (2004)
    • Integration of HfSiON Transistors for Low-Standby-Power Applications (2005)
    • High-kゲート絶縁膜を有する65nmノードSRAM技術 (特集 次世代半導体製造のための新プロセス技術・新材料) (2005)
  • OOTSUKA Fumio ID: 9000107317212

    Semiconductor Leading Edge Technologies, Inc. (Selete) (2006 from CiNii)

    Articles in CiNii:1

    • Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
  • OOTSUKA Fumio ID: 9000107388890

    Semiconductor Leading Edge Technologies Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile (2004)
  • Ootsuka Fumio ID: 9000025064246

    Articles in CiNii:1

    • Hole mobility enhancement caused by gate-induced vertical strain in gate-first full-metal high-k p-channel field effect transistors using ion-beam W (2009)
  • Ootsuka Fumio ID: 9000258180637

    Semiconductor Leading Edge Technologies Inc. (2005 from CiNii)

    Articles in CiNii:1

    • Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO2 Metal Gate Stacks (2005)
  • Ootsuka Fumio ID: 9000401735673

    Articles in CiNii:1

    • Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO2Metal Gate Stacks (2005)
  • Ootsuka Fumio ID: 9000401755100

    Articles in CiNii:1

    • Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
Page Top