Search Results1-4 of  4

  • Oshida Daisuke ID: 9000018256352

    Articles in CiNii:1

    • Effects of postetching treatment on molecular-pore-stacking/Cu interconnects for 28nm node and beyond (Special issue: Advanced metallization for ULSI applications) (2011)
  • OSHIDA Daisuke ID: 9000107313688

    Advanced Device Development Division, NEC Electronics Corporation (2007 from CiNii)

    Articles in CiNii:1

    • Time-Dependent Dielectric Breakdown Characterization of 90- and 65-nm-Node Cu/SiOC Interconnects with Via Plugs (2007)
  • Oshida Daisuke ID: 9000401797051

    Articles in CiNii:1

    • Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond (2011)
  • Oshida Daisuke ID: 9000401997920

    Articles in CiNii:1

    • Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond (2011)
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