Search Results1-7 of  7

  • Oshida Makiko ID: 9000025037968

    Articles in CiNii:1

    • Electron holography characterization of ultra shallow junctions in 30-nm-gate-length metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • OSHIDA Makiko ID: 9000001496561

    R&D Support Center, NEC Corporation (2005 from CiNii)

    Articles in CiNii:3

    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2005)
    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2004)
    • Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO_2 gate stacks (2005)
  • OSHIDA Makiko ID: 9000002176919

    NEC Corporation, Device Platforms Research Laboratories (2007 from CiNii)

    Articles in CiNii:1

    • Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs (2007)
  • OSHIDA Makiko ID: 9000006001551

    NEC (2007 from CiNii)

    Articles in CiNii:4

    • Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates (2007)
    • Improved Sub-10-nm CMOS Devices with Elevated Source/Drain Extensions by Tunneling Si-Selective-Epitaxial-Growth (2006)
    • Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates (2007)
  • Oshida Makiko ID: 9000058437205

    Articles in CiNii:1

    • Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2Gate Stacks (2006)
  • Oshida Makiko ID: 9000283809369

    NEC Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Metal Gate Electrodes on HfSiON and SiO<sub>2</sub> Gate Dielectrics (2006)
  • Oshida Makiko ID: 9000401768297

    Articles in CiNii:1

    • 2008-04-25 (2008)
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