Search Results1-20 of  41

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  • Oshima Takayoshi ID: 9000019180480

    Articles in CiNii:1

    • Epitaxial Structures of Band-Gap-Engineered α-(Cr[x]Fe₁₋x)₂O₃ (0 ≤ x ≤ 1) Films Grown on C-Plane Sapphire (Special Issue : Applied Physics on Materials Research) (2012)
  • Oshima Takayoshi ID: 9000241524390

    Articles in CiNii:1

    • Formation of Semi-Insulating Layers on Semiconducting β-Ga₂O₃ Single Crystals by Thermal Oxidation (2013)
  • Oshima Takayoshi ID: 9000241878126

    Articles in CiNii:1

    • β-Ga₂O₃ Single Crystal as a Photoelectrode for Water Splitting (2013)
  • OSHIMA Takayoshi ID: 9000014188963

    Department of Electronic Science and Engineering, Kyoto University (2008 from CiNii)

    Articles in CiNii:1

    • Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga_2O_3 Substrates (2008)
  • OSHIMA Takayoshi ID: 9000017323837

    Articles in CiNii:3

    • Wide-band-gap gallium oxide semiconductors (2009)
    • Artificial Surface Control of Gallium Oxide Semiconductors and Growth of High Quality Single-crystalline Thin Films (2010)
    • 酸化ガリウム系ヘテロ接合界面におけるキャリア閉じ込めの観察 (電子デバイス研究会 次世代化合物半導体デバイスの機能と応用) (2017)
  • OSHIMA Takayoshi ID: 9000253484199

    同和鉱業株式会社柵原鉱業所 (1958 from CiNii)

    Articles in CiNii:1

    • Geology and Ore Deposits of the Yanahara Mine with Reference to Structural Control (1958)
  • OSHIMA Takayoshi ID: 9000402089273

    Articles in CiNii:1

    • Band-gap narrowing in α-(Cr<sub>x</sub>Fe<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> solid-solution films (2011)
  • OSHIMA Takayoshi ID: 9000402089799

    Articles in CiNii:1

    • Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskites (2013)
  • Oshima Takayoshi ID: 9000006592689

    INS, Univ. of Tokyo (1980 from CiNii)

    Articles in CiNii:2

    • 4. β-decayによるν^^-_e質量の測定計画 : Feasibility test of ν^^-_e-mass measurement in Japan(ニュートリノ質量,研究会報告) (1980)
    • ニュートリノ質量についての実験の現状(総合報告) (1980)
  • Oshima Takayoshi ID: 9000024977417

    Articles in CiNii:1

    • β-Al2xGa2-2xO3 thin film growth by molecular beam epitaxy (2009)
  • Oshima Takayoshi ID: 9000024988492

    Articles in CiNii:1

    • Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors (2007)
  • Oshima Takayoshi ID: 9000025031135

    Articles in CiNii:1

    • Wet etching of β-Ga2O3 substrates (2009)
  • Oshima Takayoshi ID: 9000025114819

    Articles in CiNii:1

    • Flame detection by a β-Ga2O3-based sensor (2009)
  • Oshima Takayoshi ID: 9000025119590

    Articles in CiNii:1

    • (111)-Oriented Zn3N2 Growth on a-Plane Sapphire Substrates by Molecular Beam Epitaxy (2006)
  • Oshima Takayoshi ID: 9000025126087

    Articles in CiNii:1

    • UV-B sensor based on a SnO2 thin film (2009)
  • Oshima Takayoshi ID: 9000283820232

    The University of Tokyo (2010 from CiNii)

    Articles in CiNii:1

    • エバネッセント光を利用したナノ光造形法に関する研究(第12報):エバネッセント露光層の積層実験 (2010)
  • Oshima Takayoshi ID: 9000283820683

    The University of Tokyo (2011 from CiNii)

    Articles in CiNii:1

    • エバネッセント光を利用したナノ光造形法に関する研究(第13報):面内形状制御同期積層実験 (2011)
  • Oshima Takayoshi ID: 9000283821393

    The University of Tokyo (2011 from CiNii)

    Articles in CiNii:1

    • エバネッセント露光型ナノ光造形法に関する研究(第14 報):AFM観察に基づいた硬化形状制御法の実験的検討 (2011)
  • Oshima Takayoshi ID: 9000392599848

    同和鉱業株式会社柵原鉱業所探査課 (1959 from CiNii)

    Articles in CiNii:1

    • 含銅硫化鉄鉱床および層状鉱床 (1959)
  • Oshima Takayoshi ID: 9000396133946

    Department of Chemistry, Graduate School of Science and Engineering, Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Analysis of Optical Properties and Structures of Nitrogen Doped Gallium Oxide (2018)
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