Search Results1-3 of  3

  • PARK CHUN-GEUN ID: 9000253031179

    Semiconductor R&D Center-Kihung, Samsung Electronics (1992 from CiNii)

    Articles in CiNii:1

    • A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor. (1992)
  • Park Chun-Geun ID: 9000253028095

    Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • New ArF Single-Layer Resist for 193-nm Lithography. (1997)
  • Park Chun-Geun ID: 9000253028271

    Semiconductor R & D Center, Samsung Electronics (1997 from CiNii)

    Articles in CiNii:1

    • Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography. (1997)
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