Search Results1-7 of  7

  • PENSL Gerhard ID: 9000001825885

    Institute of Applied Physics, University of Erlangen-Nurnberg (2006 from CiNii)

    Articles in CiNii:1

    • Very Low Interface State Density From Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism (2006)
  • PENSL Gerhard ID: 9000001825898

    Institute of Applied Physics, University of Erlangen-Nurnberg (2006 from CiNii)

    Articles in CiNii:1

    • Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching (2006)
  • Pensl Gerhard ID: 9000024267294

    Articles in CiNii:1

    • Special issue on silicon carbide devices and technology (2008)
  • Pensl Gerhard ID: 9000024370523

    Articles in CiNii:1

    • Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC (2010)
  • Pensl Gerhard ID: 9000401751895

    Articles in CiNii:1

    • 2006-09-07 (2006)
  • Pensl Gerhard ID: 9000401751903

    Articles in CiNii:1

    • 2006-09-07 (2006)
  • Pensl Gerhard ID: 9000401761129

    Articles in CiNii:1

    • 2007-08-06 (2007)
Page Top