Search Results1-19 of  19

  • Pernot Cyril ID: 9000310736928

    Articles in CiNii:1

    • Market expansion by DUV-LED with higher optical output power (2015)
  • PERNOT Cyril ID: 9000000255677

    Invited from Groupe d'Etude des Semiconducteurs, Universite Montpellier II (1999 from CiNii)

    Articles in CiNii:1

    • Application of GaN-based photodetector to flame detection (1999)
  • PERNOT Cyril ID: 9000005649691

    UV Craftory Co., Ltd. (2010 from CiNii)

    Articles in CiNii:3

    • Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes (2010)
    • Low-Intensity Ultraviolet Photodetectors Based on AlGaN (1999)
    • Investigation of the Leakage Current in GaN P-N Junctions (1998)
  • PERNOT Cyril ID: 9000005917769

    Picogiga, Place Marcel Rebuffat (2001 from CiNii)

    Articles in CiNii:1

    • Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells (2001)
  • PERNOT Cyril ID: 9000018727068

    UV Craftory (2011 from CiNii)

    Articles in CiNii:3

    • Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED (2011)
    • Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED (2011)
    • Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED (2011)
  • PERNOT Cyril ID: 9000046254750

    Groupe d'Etude des Semiconducteurs, Universite Montpellier II.Place Eugene Bataillon (2000 from CiNii)

    Articles in CiNii:1

    • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes (2000)
  • PERNOT Cyril ID: 9000107376235

    UV Craftory Co., Ltd. (2011 from CiNii)

    Articles in CiNii:1

    • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates (2011)
  • PERNOT Cyril ID: 9000253327276

    Invited from Groupe d'Etude des Semiconducteurs, Université Montpellier II (1999 from CiNii)

    Articles in CiNii:1

    • Application of CaN-based photodetector to flame detection (1999)
  • Pernot Cyril ID: 9000024960618

    Articles in CiNii:1

    • Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes (2011)
  • Pernot Cyril ID: 9000258138888

    Research and Development Department, Osaka Gas Co. Ltd., 17 Chudoji–awata–machi, Shimogyo–ku, Kyoto 600, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Investigation of the Leakage Current in GaN P-N Junctions. (1998)
  • Pernot Cyril ID: 9000258157976

    Picogiga, Place Marcel Rebuffat, 91971 Courtaboeuf 7 Cedex, France (2001 from CiNii)

    Articles in CiNii:1

    • Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells. (2001)
  • Pernot Cyril ID: 9000401568175

    Articles in CiNii:1

    • 2010-06-11 (2010)
  • Pernot Cyril ID: 9000401571216

    Articles in CiNii:1

    • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates (2011)
  • Pernot Cyril ID: 9000401676740

    Articles in CiNii:1

    • Investigation of the Leakage Current in GaN P-N Junctions (1998)
  • Pernot Cyril ID: 9000401686475

    Articles in CiNii:1

    • Low-Intensity Ultraviolet Photodetectors Based on AlGaN (1999)
  • Pernot Cyril ID: 9000401694542

    Articles in CiNii:1

    • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes (2000)
  • Pernot Cyril ID: 9000401704369

    Articles in CiNii:1

    • Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells (2001)
  • Pernot Cyril ID: 9000402003046

    Articles in CiNii:1

    • Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes (2011)
  • Pernot Cyril ID: 9000402042558

    Articles in CiNii:1

    • Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output (2017)
Page Top