Search Results1-8 of  8

  • PYI Seung Ho ID: 9000107365470

    Hynix Semiconductor Inc. (2012 from CiNii)

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • PYI Seung-Ho ID: 9000001720016

    Memory R&D Div., HYUNDAI Electronics Ind. Co. Ltd. (1996 from CiNii)

    Articles in CiNii:1

    • Double Spacer LOCOS Process with Shallow Recess of Silicon for 0.20μm Isolation (1996)
  • PYI Seung-Ho ID: 9000002172051

    Memory R&D Division, Hynix Semiconductor Inc. (2006 from CiNii)

    Articles in CiNii:1

    • Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM (2006)
  • PYI Seung-Ho ID: 9000005915345

    Hynix Semiconductor Inc. (2001 from CiNii)

    Articles in CiNii:1

    • observation of Micro-Oxygen precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown (2001)
  • Pyi Seung Ho ID: 9000401573495

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • Pyi Seung-Ho ID: 9000058700463

    Articles in CiNii:1

    • Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices (2007)
  • Pyi Seung-Ho ID: 9000258154901

    Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ichon, Kyoungki 467-701, Korea (2001 from CiNii)

    Articles in CiNii:1

    • Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown. (2001)
  • Pyi Seung-Ho ID: 9000401702936

    Articles in CiNii:1

    • Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown (2001)
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