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  • PARK Churoo ID: 9000019055885

    Memory Division, Samsung Electronics Corporation (2011 from CiNii)

    Articles in CiNii:1

    • An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs (2011)
  • Park Churoo ID: 9000004872713

    Product Development Center, Memory Division, Samsung Electronics (1994 from CiNii)

    Articles in CiNii:1

    • 16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994)) (1994)
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