Search Results1-3 of  3

  • PARK Geun-Suk ID: 9000006459524

    Memory R&D Division, Hynix Semiconductor Co. (2002 from CiNii)

    Articles in CiNii:2

    • Characterization of the Co-Silicide Penetration Depth into the Junction Area (2001)
    • Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology (2002)
  • Park Geun-Suk ID: 9000258161358

    Memory R&D Division, Hynix Semiconductor Co., Chongju, Choongbuk, 361-480, Korea (2002 from CiNii)

    Articles in CiNii:1

    • Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology. (2002)
  • Park Geun-Suk ID: 9000401706099

    Articles in CiNii:1

    • Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology (2002)
Page Top