Search Results1-8 of  8

  • Park Jong Kyung ID: 9000024979711

    Articles in CiNii:1

    • Mechanism of date retention improvement by high temperature annealing of Al2O3 blocking layer in flash memory device (Special issue: Solid state devices and materials) (2011)
  • Park Jong Kyung ID: 9000024990974

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • PARK Jong Kyung ID: 9000017674126

    Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (2010 from CiNii)

    Articles in CiNii:1

    • Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device (2010)
  • PARK Jong Kyung ID: 9000107365466

    Department of Electrical Engineering, KAIST (2012 from CiNii)

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • Park Jong Kyung ID: 9000401568696

    Articles in CiNii:1

    • Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device (2010)
  • Park Jong Kyung ID: 9000401573491

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • Park Jong Kyung ID: 9000401795939

    Articles in CiNii:1

    • Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device (2011)
  • Park Jong Kyung ID: 9000401996814

    Articles in CiNii:1

    • Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device (2011)
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