Search Results1-5 of  5

  • PARK Jongwoo ID: 9000001722486

    R & D Center, Samsung Electronics, Co., LTD. (1995 from CiNii)

    Articles in CiNii:1

    • A 0.25μm CMOSFET Using Halo Implantation for 1Gb DRAM (1995)
  • PARK Jongwoo ID: 9000017674719

    Technology Reliability, System LSI, Samsung Electronics (2010 from CiNii)

    Articles in CiNii:1

    • Crystallization Behaviour of Electroless Ni-P UBM with Medium Phosphorous Induced by Single and Step Heat Treatment (2010)
  • PARK Jongwoo ID: 9000018719928

    Quality & Reliability Team, Samsung Electronics Co., Ltd. (2011 from CiNii)

    Articles in CiNii:1

    • Effect of Pd Addition in ENIG Surface Finish on Drop Reliability of Sn-Ag-Cu Solder Joint (2011)
  • Park Jongwoo ID: 9000006362410

    Kobe University International Student Center (2009 from CiNii)

    Articles in CiNii:10

    • A contrastive Study of Japanese particle "Mo" and Korean particle "Do" (2002)
    • The internationalization strategy behind the "Summer program in Japanese language and culture" of Kobe University (2007)
    • The role of collaboration with local community for international education strategy: based on the case of the Kobe University Summer Program in Japanese Language and Culture (2008)
  • Park Jongwoo ID: 9000257852457

    Quality & Reliability Team, Samsung Electronics Co., Ltd. (2011 from CiNii)

    Articles in CiNii:1

    • Effect of Pd Addition in ENIG Surface Finish on Drop Reliability of Sn-Ag-Cu Solder Joint (2011)
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