Search Results1-18 of  18

  • RAJ Mothi Madhan ID: 9000004959415

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2000 from CiNii)

    Articles in CiNii:3

    • Design and Development of 1.55μm Single-Mode Semiconductor Lasers Consisting of Deeply Etched Grooves Buried with Benzocyclobutene (2000)
    • 1.55μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene DBR Lasers (2000)
    • Design and Development of 1.55μm Single-Mode Semiconductor Lasers Consisting of Deeply Etched Grooves Buried with Benzocyclobutene (2000)
  • RAJ Mothi Madhan ID: 9000005579357

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2001 from CiNii)

    Articles in CiNii:7

    • Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation (2001)
    • Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures (1997)
    • Continuous Wave Operation of 1.55μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector (1999)
  • RAJ Mothi Madhan ID: 9000107334671

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers (2001)
  • Raj Mothi Madhan ID: 9000258133599

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures. (1997)
  • Raj Mothi Madhan ID: 9000258139351

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan (1998 from CiNii)

    Articles in CiNii:1

    • GaInAsP/InP Multiple Short Cavity Laser with .LAMBDA./4-Air Gap/Semiconductor Bragg Reflectors. (1998)
  • Raj Mothi Madhan ID: 9000258143988

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Continuous Wave Operation of 1.55.MU.m GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector. (1999)
  • Raj Mothi Madhan ID: 9000258148186

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152–8552, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH4/H2-Reactive lon Etching. (1999)
  • Raj Mothi Madhan ID: 9000258149104

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser. (2000)
  • Raj Mothi Madhan ID: 9000258149585

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology,<BR> 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Highly Uniform 1.5.MU.m Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers. (2000)
  • Raj Mothi Madhan ID: 9000258156955

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-.MU.m-Wavelength Single-Mode Operation. (2001)
  • Raj Mothi Madhan ID: 9000401666987

    Articles in CiNii:1

    • Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures (1997)
  • Raj Mothi Madhan ID: 9000401677125

    Articles in CiNii:1

    • GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors (1998)
  • Raj Mothi Madhan ID: 9000401685456

    Articles in CiNii:1

    • 1999-11-01 (1999)
  • Raj Mothi Madhan ID: 9000401686980

    Articles in CiNii:1

    • Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH 4/H 2-Reactive Ion Etching (1999)
  • Raj Mothi Madhan ID: 9000401692002

    Articles in CiNii:1

    • Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser (2000)
  • Raj Mothi Madhan ID: 9000401694094

    Articles in CiNii:1

    • 2000-12-15 (2000)
  • Raj Mothi Madhan ID: 9000401697497

    Articles in CiNii:1

    • High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers (2001)
  • Raj Mothi Madhan ID: 9000401699233

    Articles in CiNii:1

    • 2001-06-15 (2001)
Page Top