Search Results1-6 of  6

  • SAITO Yukishige ID: 9000002166174

    System Devices Research Laboratories, NEC Corp. (2004 from CiNii)

    Articles in CiNii:2

    • 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs (2004)
    • Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs (2004)
  • SAITO Yukishige ID: 9000004964699

    NEC シリコンシステム研究所 (2004 from CiNii)

    Articles in CiNii:2

    • Poly-Si/HfSiO/SiO_2ゲート構造を用いた低電力、高速HfSiOゲート CMOS FET (2004)
    • Si-Surface Amorphization Effects and SEDAM Method for Low-Resistance TiSi_2 Film Formation (1995)
  • SAITO Yukishige ID: 9000004965663

    Silicon Systems Research Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:3

    • A direct nitradation and sequential oxidation process for 2.5-nm thick gate dielectric and its MOSFET characteristics (1997)
    • A Highly Reliable 0.25μm MOSFETs with Ultra-Thin Oxidized Nitride Gate Dielectric (1997)
    • A Highly Reliable 0.25μm MOSFETs with Ultra-Thin Oxidized Nitride Gate Dielectric (1997)
  • SAITO Yukishige ID: 9000107344137

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • Saito Yukishige ID: 9000258181162

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs (2005)
  • Saito Yukishige ID: 9000401735909

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2CMOSFETs (2005)
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