Search Results1-20 of  150

  • Sameshima Toshiyuki ID: 9000018915804

    Articles in CiNii:1

    • Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials) (2012)
  • Sameshima Toshiyuki ID: 9000024954279

    Articles in CiNii:1

    • Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement (2013)
  • Sameshima Toshiyuki ID: 9000025019440

    Articles in CiNii:1

    • Minority carrier lifetime measurements by photoinduced carrier microwave absorption method (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials) (2011)
  • Sameshima Toshiyuki ID: 9000025042103

    Articles in CiNii:1

    • Activation of implanted boron atoms in silicon wafers by infrared semiconductor laser annealing using carbon films as optical absorption layers (2007)
  • Sameshima Toshiyuki ID: 9000025085959

    Articles in CiNii:1

    • Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H₂O Vapor Heat Treatment (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials) (2012)
  • Sameshima Toshiyuki ID: 9000025120603

    Articles in CiNii:1

    • Defect reduction in polycrystalline silicon thin films at 150℃ (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials) (2010)
  • Sameshima Toshiyuki ID: 9000241501736

    Articles in CiNii:1

    • Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon (2013)
  • SAMESHIMA Toshiyuki ID: 9000000019254

    Tokyo University of Agriculture & Technology, Faculty of Engineering, Division of Electrical Engineering (2003 from CiNii)

    Articles in CiNii:2

    • Recent developments in fabrication processes of polycrystalline silicon thin film transistors (1996)
    • Preface to Topical Papers on Crystallization of Silicon Using Laser Annealing and Its Application to Electronic Device Fabrication (2003)
  • SAMESHIMA Toshiyuki ID: 9000001479815

    Tokyo University of Agriculture and Technology (2007 from CiNii)

    Articles in CiNii:2

    • Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250℃ (2005)
    • Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer (2007)
  • SAMESHIMA Toshiyuki ID: 9000002175987

    Hightec Systems Corporation (2007 from CiNii)

    Articles in CiNii:1

    • Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers (2007)
  • SAMESHIMA Toshiyuki ID: 9000003276999

    Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:17

    • Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors (2003)
    • Experimental Study of the Hyper-Raman Scattering Due to Raman Inactive Lattice Vibration in SrTiO3 (1981)
    • Observation of Hyper-Raman Scattering Spectra Due to Lattice Vibration in SrTio_3 (1979)
  • SAMESHIMA Toshiyuki ID: 9000004754932

    Tokyo University of Agriculture and Technology (2009 from CiNii)

    Articles in CiNii:26

    • 多結晶半導体国際会議2002報告 (2002)
    • Defect Reduction of Commercial Solar Cells by High-Pressure H_2O Vapor Treatment (2009)
    • Change in Electrical Property of MOS Structures by Plasma Irradiation (2009)
  • SAMESHIMA Toshiyuki ID: 9000005597836

    Tokyo University of Agriculture & Technology (1999 from CiNii)

    Articles in CiNii:1

    • Electrical Properties of Pulsed Laser Crystallized Silicon Films (1999)
  • SAMESHIMA Toshiyuki ID: 9000005689074

    Tokyo University of Agriculture and Technology (1998 from CiNii)

    Articles in CiNii:1

    • Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor (1998)
  • SAMESHIMA Toshiyuki ID: 9000005902414

    Tokyo University of Agriculture and Technology (2000 from CiNii)

    Articles in CiNii:1

    • Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment (2000)
  • SAMESHIMA Toshiyuki ID: 9000005926219

    Tokyo University of Agriculture and Technology (2000 from CiNii)

    Articles in CiNii:1

    • Current-Induced Joule Heating Used to Crystallize Silicon Thin Films (2000)
  • SAMESHIMA Toshiyuki ID: 9000107313549

    Tokyo University of Agriculture and Technology (2007 from CiNii)

    Articles in CiNii:1

    • Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H_2O Vapor (2007)
  • SAMESHIMA Toshiyuki ID: 9000107334581

    Department of Engineering, Tokyo University of Agriculture and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films (2001)
  • SAMESHIMA Toshiyuki ID: 9000107334727

    Department of Engineering, Tokyo University of Agriculture and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Stress in Pulsed-Laser-Crystallized Silicon Films (2001)
  • SAMESHIMA Toshiyuki ID: 9000107350420

    Division of Electric and Information Engineering, Tokyo University of Agriculture and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density (2001)
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