Search Results1-13 of  13

  • SAMONJI Katsuya ID: 9000018631101

    Panasonic Corporation (2013 from CiNii)

    Articles in CiNii:4

    • High-power Blue-violet Laser Diodes with Window-structure (2010)
    • High-Power Operation and Applications of InGaN Laser Diode (2013)
    • High-Power Operation and Applications of InGaN Laser Diode (2013)
  • SAMONJI Katsuya ID: 9000107311609

    ERATO JST, UCSB group, University of California (2005 from CiNii)

    Articles in CiNii:1

    • Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding (2005)
  • SAMONJI Katsuya ID: 9000107376075

    ERATO/JST, UCSB group (2005 from CiNii)

    Articles in CiNii:1

    • Growth of AlN by the Chemical Vapor Reaction Process (2005)
  • SHIBAO Kazuhiro ID: 9000004813378

    Department of Electrical and Electronic Engineering, Toyohashi University of Technology:(Present)Matsushita Electric Industrial Co., Ltd. (2002 from CiNii)

    Articles in CiNii:6

    • Fundamental Device and Circuits for Synaptic Connections in Self-Organizing Neural Networks (1996)
    • High-Quality GaAs_xP_<1-x>/In_<0.13>Ga_<0.87>P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations (1999)
    • Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP)_1(GaAs)_n Quaternary Strained Short-Period Superlattices Grown on GaAs (1995)
  • Samonji Katsuya ID: 9000258144314

    Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Tempaku–cho, Hibarigaoka, Toyohashi, Aichi 441–8580, Japan (1999 from CiNii)

    Articles in CiNii:1

    • High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations. (1999)
  • Samonji Katsuya ID: 9000258178537

    ERATO/JST, UCSB group (2005 from CiNii)

    Articles in CiNii:1

    • Growth of AlN by the Chemical Vapor Reaction Process (2005)
  • Samonji Katsuya ID: 9000258179267

    ERATO JST, UCSB group, University of California (2005 from CiNii)

    Articles in CiNii:1

    • Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding (2005)
  • Samonji Katsuya ID: 9000401653546

    Articles in CiNii:1

    • Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP) 1(GaAs)n Quaternary Strained Short-Period Superlattices Grown on GaAs (1995)
  • Samonji Katsuya ID: 9000401684148

    Articles in CiNii:1

    • High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations (1999)
  • Samonji Katsuya ID: 9000401688765

    Articles in CiNii:1

    • Lattice-Relaxation Process of (InAs)m(GaAs)nStrained Short-Period Superlattices Grown on GaAs (2000)
  • Samonji Katsuya ID: 9000401709109

    Articles in CiNii:1

    • Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate (2002)
  • Samonji Katsuya ID: 9000401742677

    Articles in CiNii:1

    • Growth of AlN by the Chemical Vapor Reaction Process (2005)
  • Samonji Katsuya ID: 9000401745283

    Articles in CiNii:1

    • Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding (2005)
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