Search Results1-20 of  29

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  • Satake Hideki ID: 9000319072070

    Articles in CiNii:1

    • Observation of anisotropic microstructural changes during cycling in LiNi₀.₅Co₀.₂Mn₀.₃O₂ cathode material (2016)
  • Hideki SATAKE ID: 9000402808807

    Articles in CiNii:1

    • Clinical Application of Glass Ceramic Particles (1991)
  • SATAKE Hideki ID: 9000000522094

    Advanced LSI Technology Laboratory, Toshiba Corporation (2004 from CiNii)

    Articles in CiNii:2

    • An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration (1992)
    • Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111) (2004)
  • SATAKE Hideki ID: 9000001505962

    Advanced LSI Technology Laboratory, Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Extraction of Interface State Density in Ultra-Thin Gate Dielectrics : A Composition Method of Ideal CV Curves in High-Frequency CV Analysis (2001)
  • SATAKE Hideki ID: 9000001506650

    Advanced LSI Technology Laboratory, Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:1

    • The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity (2001)
  • SATAKE Hideki ID: 9000001716589

    Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Reliability Concern of Ultra-Thin Gate Oxides (1997)
  • SATAKE Hideki ID: 9000001719262

    Advanced LSI Technology Laboratory, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method (2000)
  • SATAKE Hideki ID: 9000001719298

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Impact of TDDB Distribution Function on Lifetime Estimation in Ultra-Thin Gate Oxides (2000)
  • SATAKE Hideki ID: 9000001719762

    MIRAI, Association of Super-Advanced Electronics Technologies (ASET) (2006 from CiNii)

    Articles in CiNii:8

    • A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides (2000)
    • Two Correlated Mechanisms in Thin SiO_2 Breakdown (1996)
    • Reliability of Structurally Modified Ultra-Thin Gate Oxides (1995)
  • SATAKE Hideki ID: 9000002166684

    MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), AIST (2004 from CiNii)

    Articles in CiNii:1

    • Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation (2004)
  • SATAKE Hideki ID: 9000002174835

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack (2006)
  • SATAKE Hideki ID: 9000002512068

    東日本学園大学口腔外科2 (1993 from CiNii)

    Articles in CiNii:6

    • <CLINICAL REPORT>Case report of Herpes Zoster in the area of the secon and third division of the trigeminal nerve (1992)
    • 39.心身障害者の顎骨骨折の2例 : 特に処置に関する問題点(一般講演)(東日本学園大学歯学会第11回学術大会(平成5年度総会)) (1993)
    • Clinical Application of Glass Ceramic Particles (1991)
  • SATAKE Hideki ID: 9000004431731

    Research & Development Center (2002 from CiNii)

    Articles in CiNii:4

    • Production of Amorphous Solf Magnetic Powders by the New Water Atomization Process "SWAP" (2001)
    • Magnetic properties of Fe-based amorphous powder cores produced by cold-pressing method (2001)
    • Magnetic Properties of Compressed Fe-based Amorphous powder cores and Their applications (1999)
  • SATAKE Hideki ID: 9000004964907

    Advanced LSI Technology Laboratory, Toshiba Corporation 8 (2006 from CiNii)

    Articles in CiNii:6

    • Dielectric Breakdown Mechanism of Hf-silicate High-k Gate Dielectrics (2004)
    • 極薄ゲート酸化膜絶縁破壊機構の解明と新高信頼化成膜プロセスの提案 (2000)
    • 重水素による極薄ゲート酸化膜の高信頼化実証と信頼性向上機構の解明 (2002)
  • SATAKE Hideki ID: 9000004965945

    MIRAI Project-ASET (2006 from CiNii)

    Articles in CiNii:9

    • Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics (2005)
    • Improvement of Transistor Performance and Insulator Reliability by Robust high-k/IL/Si Structure with High Temperature Wet Treatment after HfON Deposition (2006)
    • On the Degradation Mechanisms of Thin SiO_2 under Fowler-Nordheim Electron Injection (1998)
  • SATAKE Hideki ID: 9000004966350

    Articles in CiNii:2

    • シリコン酸化膜技術--高信頼ゲート酸化膜実現を目指した膜劣化機構の解明と新成膜プロセスの提案 (特集 先端半導体デバイス技術) (1999)
    • Origin of Dielectric Breakdown and Stress-induced Leakage Current in Ultra-thin Silicondioxide (1996)
  • SATAKE Hideki ID: 9000005502699

    横浜国立大学工学部:(現)ヤマハ発動機(株) (1995 from CiNii)

    Articles in CiNii:1

    • Capsizing and Restoration of a Sailing Yacht in Breaking Isolated Triangular Transient Waves and Breaking Long Crested Transient Waves (1995)
  • SATAKE Hideki ID: 9000005925820

    Advanced LSI Technology Laboratory, Toshiba Corp. (2000 from CiNii)

    Articles in CiNii:3

    • Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics (1998)
    • Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection (2000)
    • A Study of the Effect of Deuterium on Stress-Induced Leakage Current (2000)
  • SATAKE Hideki ID: 9000107335661

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode (2003)
  • SATAKE Hideki ID: 9000107343647

    MIRAI, Association of Super-Advanced Electronics Technologies (ASET) (2005 from CiNii)

    Articles in CiNii:1

    • Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2 Dielectrics (2005)
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