Search Results1-20 of  139

  • Sato Motoyuki ID: 9000025017579

    Articles in CiNii:1

    • Study of a negative threshold voltage shift in positive bias temperature instability and a positive threshold voltage shift the negative bias temperature instability of yttrium-doped HfO2 gate dielectrics (Special issue: Solid state devices and materials) (2010)
  • Sato Motoyuki ID: 9000025031442

    Articles in CiNii:1

    • Impact of activation annealing temperature on the performance, negative bias temperature instability, and time-to-dielectric breakdown lifetime of high-k/metal gate stack p-type metal-oxide-semiconductor field effect transistors (Special issue: Solid state devices and materials) (2009)
  • Sato Motoyuki ID: 9000025038667

    Articles in CiNii:1

    • Performance and reliability improvement by optimizing the nitrogen content of the TaSiNx metal gate in metal/HfSiON n-type field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • Sato Motoyuki ID: 9000025038877

    Articles in CiNii:1

    • Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1nm (Special issue: Solid state devices and materials) (2008)
  • Sato Motoyuki ID: 9000025063108

    Articles in CiNii:1

    • Vestiges of multiple progressive dielectric breakdown on HfSiON surfaces (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2009)
  • Sato Motoyuki ID: 9000025064260

    Articles in CiNii:1

    • Impact on performance, positive bias temperature instability, and time-dependent dielectric breakdown of n-type field effect transistors incorporating Mg into HfSiON gate dielectrics (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2009)
  • Sato Motoyuki ID: 9000025083884

    Articles in CiNii:1

    • Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state (2007)
  • Sato Motoyuki ID: 9000025084628

    Articles in CiNii:1

    • Cathode electron injection breakdown model and time dependent dielectric breakdown lifetime prediction in high-k/metal gate stack p-type metal-oxide-silicon field effect transistors (2008)
  • SATO Motoyuki ID: 9000365043584

    Articles in CiNii:1

    • Quantitative Hydrogeological Study of an Unconfined Aquifer by GPR along Tuul River in Ulaanbaatar (2007)
  • SATO Motoyuki ID: 9000375845010

    Articles in CiNii:1

    • Application for GPR Survey to Faults in Mogod Earthquake in Central Mongolia (宇宙・航行エレクトロニクス) -- (地下電磁計測ワークショップ) (2017)
  • SATO Motoyuki ID: 9000375846212

    Articles in CiNii:1

    • Recent Activities on Archaeological Survey by GPR : Case study in Inari-yama Kofun (宇宙・航行エレクトロニクス) -- (地下電磁計測ワークショップ) (2017)
  • Sato Motoyuki ID: 9000403114716

    Articles in CiNii:1

    • Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study (2008)
  • SATO Motoyuki ID: 1000040178778

    Center for Northeast Asian Studies, Tohoku University (2014 from CiNii)

    Articles in CiNii:221

    • Subsurface Imaging by Vertical Radar Profiling(VRP) and its Application to Tajiri Archaeological Site (1997)
    • GROUND PENETRATING RADAR AND ITS APPLICATIONS (1996)
    • Proposed Design of a Directional Induction Tool (1995)
  • SATO Motoyuki ID: 9000001241484

    Center for Northeast Asia Studies, Tohoku Univ. (2004 from CiNii)

    Articles in CiNii:2

    • Effective methodology of DC resistivity survey for imaging the underground structure at water-covered area (2004)
    • Effect of measurement cables to field data in the DC resistivity survey (2004)
  • SATO Motoyuki ID: 9000001281705

    Center for Northeast Asian Studies, Tohoku University (2004 from CiNii)

    Articles in CiNii:1

    • Validation of the Pi-SAR Data for Land Cover Mapping (2004)
  • SATO Motoyuki ID: 9000002168726

    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:2

    • Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces (2005)
    • Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States (2005)
  • SATO Motoyuki ID: 9000002175610

    Semiconductor Leading Edge Technologies, Inc. (Selete) (2007 from CiNii)

    Articles in CiNii:2

    • Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm (2007)
    • Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs (2007)
  • SATO Motoyuki ID: 9000004820695

    Device Development Center, Hitachi, Ltd. (2003 from CiNii)

    Articles in CiNii:3

    • DFT Timing Design Methodology for Logic BIST (2003)
    • Estimation of Subsurface Fracture Roughness by Polarimetric Borehole Radar (2000)
    • DFT Timing Design Methodology for Logic BIST(Timing Verification and Test Generation)(<Special Section>VLSI Design and CAD Algorithms) (2003)
  • SATO Motoyuki ID: 9000004863450

    Tohoku University (2001 from CiNii)

    Articles in CiNii:2

    • Special Issue on Advances in Radar Systems (2000)
    • Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems (2001)
  • SATO Motoyuki ID: 9000004963863

    Semiconductor Leading Edge Technologies Inc. (2008 from CiNii)

    Articles in CiNii:7

    • HfSiON gate dielectrics (2004)
    • Practical Work Function Tuning Based on Physical and Chemical Nature of Interfacial Impurity in Ni-FUSI/SiON and HfSiON systems (2007)
    • Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON-CMOSFET with EOT Scalable to 1nm (2007)
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