Search Results1-7 of  7

  • SAWADA Mahito ID: 9000004966060

    Department of Electronics and Information Science, Kyoto Institute of Technology (1996 from CiNii)

    Articles in CiNii:2

    • Plasma CVD of SiO:F Films from Tetraisocyanatesilane (1996)
    • Deposition of SiO_2 films from tetra isocyanate silane (1995)
  • SAWADA Mahito ID: 9000107343851

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • SAWADA Mahito ID: 9000107345386

    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition (2005)
  • SAWADA Mahito ID: 9000107355698

    Department of Electronics and Information Science, Kyoto Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Preparation of Stable F-Doped SiO_2 Thin Films from Si(NCO)_4/SiF_4/O_2 Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source (1997)
  • Sawada Mahito ID: 9000258180450

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • Sawada Mahito ID: 9000401665719

    Articles in CiNii:1

    • Preparation of Stable F-Doped SiO2Thin Films from Si(NCO)4/SiF4/O2Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source (1997)
  • Sawada Mahito ID: 9000401735488

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond (2005)
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