Search Results1-20 of  41

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  • SAWANO Kentarou ID: 9000001037372

    Research Center for Silicon Nano-Science, Advanced Research Laboratory, Tokyo City University (2012 from CiNii)

    Articles in CiNii:13

    • Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates (2003)
    • Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates (2004)
    • Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method (2005)
  • SAWANO Kentarou ID: 9000107338003

    Advanced Research Laboratories, Tokyo City University (2011 from CiNii)

    Articles in CiNii:1

    • Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon (2011)
  • SAWANO Kentarou ID: 9000107365759

    Research Center for Silicon Nano-Science, Tokyo City University (2012 from CiNii)

    Articles in CiNii:1

    • Room-Temperature Observation of Size Effects in Photoluminescence of Si_<0.8>Ge_<0.2>/Si Nanocolumns Prepared by Neutral Beam Etching (2012)
  • SAWANO Kentarou ID: 9000107366548

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers (2005)
  • SAWANO Kentarou ID: 9000107376434

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University (2011 from CiNii)

    Articles in CiNii:1

    • Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation (2011)
  • SAWANO Kentarou ID: 9000240523891

    Tokyo City University (2012 from CiNii)

    Articles in CiNii:1

    • One Year Stay in Munchen (2012)
  • Sawano Kentarou ID: 9000024988503

    Articles in CiNii:1

    • Strain state and thermal stability of strained-Si-on-insulator substrates (2007)
  • Sawano Kentarou ID: 9000079926114

    Articles in CiNii:1

    • New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication (2008)
  • Sawano Kentarou ID: 9000080384118

    Articles in CiNii:1

    • Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy (2008)
  • Sawano Kentarou ID: 9000258168223

    Department of Applied Physics, The University of Tokyo (2003 from CiNii)

    Articles in CiNii:1

    • Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates (2003)
  • Sawano Kentarou ID: 9000258176968

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers (2005)
  • Sawano Kentarou ID: 9000392392070

    Advanced Research Laboratories, Tokyo City University (2016 from CiNii)

    Articles in CiNii:1

    • Nanostructuring of poly-SiGe thin films for higher thermoelectric (2016)
  • Sawano Kentarou ID: 9000401564084

    Articles in CiNii:1

    • Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices (2008)
  • Sawano Kentarou ID: 9000401564087

    Articles in CiNii:1

    • Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well (2008)
  • Sawano Kentarou ID: 9000401564567

    Articles in CiNii:1

    • Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well (2008)
  • Sawano Kentarou ID: 9000401565041

    Articles in CiNii:1

    • Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels (2008)
  • Sawano Kentarou ID: 9000401565574

    Articles in CiNii:1

    • Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation (2008)
  • Sawano Kentarou ID: 9000401568802

    Articles in CiNii:1

    • Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices (2010)
  • Sawano Kentarou ID: 9000401571344

    Articles in CiNii:1

    • Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation (2011)
  • Sawano Kentarou ID: 9000401572119

    Articles in CiNii:1

    • Formation of Tensilely Strained Germanium-on-Insulator (2011)
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