Search Results1-8 of  8

  • Selvaraj Susai Lawrence ID: 9000025030603

    Articles in CiNii:1

    • Device characteristics of metalorganic chemical vapor deposition-grown InAlN/GaN high-electron-mobility transistors on AlN/sapphire template (Special issue: Solid state devices and materials) (2009)
  • SELVARAJ Susai Lawrence ID: 9000107342002

    Research Center for Nano-Device and System, Nagoya Institute of Technology (2009 from CiNii)

    Articles in CiNii:1

    • Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111) (2009)
  • SELVARAJ Susai Lawrence ID: 9000107355375

    Research Centre for Nano-Device and System, Nagoya Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Improved Power Device Figure-of-Merit (4.0 x 10^8V^2Ω^<-1>cm^<-2>) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si (2011)
  • Selvaraj Susai Lawrence ID: 9000025085117

    Articles in CiNii:1

    • Demonstration of AlGaN/GaN high electron mobility transistors on a-plane (1120) sapphire (2008)
  • Selvaraj Susai Lawrence ID: 9000401565949

    Articles in CiNii:1

    • 2009-02-27 (2009)
  • Selvaraj Susai Lawrence ID: 9000401571093

    Articles in CiNii:1

    • Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si (2011)
  • Selvaraj Susai Lawrence ID: 9000401778678

    Articles in CiNii:1

    • Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template (2009)
  • Susai Lawrence Selvaraj ID: 9000403597336

    Articles in CiNii:1

    • Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate (2011)
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