Search Results1-20 of  21

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  • Senzaki Junji ID: 9000025071319

    Articles in CiNii:1

    • Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment (2007)
  • Senzaki Junji ID: 9000025088420

    Articles in CiNii:1

    • Effect of postoxidation annealing on reliability of thermal oxides grown on n-type 4H-SiC(0001) wafer (2008)
  • SENZAKI Junji ID: 9000001622972

    Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (2013 from CiNii)

    Articles in CiNii:5

    • Recent progress of SiC devices in AIST(Group IV Compound Semiconductors) (2005)
    • Recent progress of SiC devices in AIST(Group IV Compound Semiconductors) (2005)
    • Various Problems of SiC MOSFET and Basic Technology (1999)
  • SENZAKI Junji ID: 9000005563059

    Faculty of Technology, Tokyo University of Agricuture and Technology (1998 from CiNii)

    Articles in CiNii:3

    • Characterization of Pb(Zr,Ti)O_3 Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices (1998)
    • c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method (1994)
    • Fabrication of c-Axis Oriented Pb(Zr, Ti)O_3 Thin Films on Si(100) Substrates Using MgO Intermediate Layer (1996)
  • Senzaki Junji ID: 9000024962293

    Articles in CiNii:1

    • Evaluation of 4H-SiC thermal oxide reliability using area-scaling method (2009)
  • Senzaki Junji ID: 9000258123067

    Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 (1994 from CiNii)

    Articles in CiNii:1

    • c-Axis-Oriented Pb(Zr, Ti)O3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method. (1994)
  • Senzaki Junji ID: 9000258143428

    Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184–8588, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Characterization of Pb(Zr,Ti)O3 Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices. (1998)
  • Senzaki Junji ID: 9000258154870

    National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan|Ultra-Low-Loss Power Device Technology Research Body, c/o AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face. (2001)
  • Senzaki Junji ID: 9000401642343

    Articles in CiNii:1

    • c-Axis-OrientedPb(Zr,Ti)O3Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method (1994)
  • Senzaki Junji ID: 9000401657784

    Articles in CiNii:1

    • Fabrication ofc-Axis OrientedPb(Zr,Ti)O3Thin Films on Si(100) Substrates Using MgO Intermediate Layer (1996)
  • Senzaki Junji ID: 9000401674316

    Articles in CiNii:1

    • Characterization of Pb(Zr, Ti)O3Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices (1998)
  • Senzaki Junji ID: 9000401702788

    Articles in CiNii:1

    • Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face (2001)
  • Senzaki Junji ID: 9000401761450

    Articles in CiNii:1

    • 2007-08-06 (2007)
  • Senzaki Junji ID: 9000401776264

    Articles in CiNii:1

    • 2008-01-18 (2008)
  • Senzaki Junji ID: 9000401977390

    Articles in CiNii:1

    • Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes (2019)
  • Senzaki Junji ID: 9000401981312

    Articles in CiNii:1

    • 2017-07-11 (2017)
  • Senzaki Junji ID: 9000402022299

    Articles in CiNii:1

    • Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers (2014)
  • Senzaki Junji ID: 9000402022479

    Articles in CiNii:1

    • Characterization of scraper-shaped defects on 4H-SiC epitaxial film surfaces (2014)
  • Senzaki Junji ID: 9000402035597

    Articles in CiNii:1

    • Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET (2016)
  • Senzaki Junji ID: 9000402048431

    Articles in CiNii:1

    • 2018-02-26 (2018)
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