Search Results1-18 of  18

  • SHIBA Kazutoshi ID: 9000004778158

    Renesas Electronics (2014 from CiNii)

    Articles in CiNii:4

    • Self-organizing formation of silicon quantum dots and their physical properties at room temperature (1997)
    • Time-Resolved Photoluminescence of Thermally Oxidized Porous Si (1993)
    • Process Design Methodology for Via-shape-controlled, Cu Dual-damascene Interconnects Tailored in Low-k Organic Film (2001)
  • SHIBA Kazutoshi ID: 9000005543650

    NEC Electronics Corporation (2007 from CiNii)

    Articles in CiNii:6

    • Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film (2003)
    • Multilevel Aluminum Dual-Damascene Interconnects (Al-DDI) for Process-Step Reduction in 0.18um-ULSIs (1998)
    • A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13μm Complementary Metal Oxide Semiconductor Generation (2007)
  • SHIBA Kazutoshi ID: 9000107344728

    Articles in CiNii:1

    • Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots (1997)
  • Shiba Kazutoshi ID: 9000252980775

    Department of Electrical Engineering, Hiroshima University (1992 from CiNii)

    Articles in CiNii:1

    • Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films (1992)
  • Shiba Kazutoshi ID: 9000252986809

    Department of Electrical Engineering, Hiroshima University (1993 from CiNii)

    Articles in CiNii:1

    • Luminescence from Thermally Oxidized Porous Silicon (1993)
  • Shiba Kazutoshi ID: 9000257896018

    Advanced Technology Development Division, NEC Electronics Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Elimination of Resist Poisoning in Via-First Dual Damascene Processes (2003)
  • Shiba Kazutoshi ID: 9000258133661

    Department of Electrical Engineering, Hiroshima University, 1–4–1 Kagamiyama, Higashi–Hiroshima 739, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots. (1997)
  • Shiba Kazutoshi ID: 9000304970833

    Renesas Electronics (2014 from CiNii)

    Articles in CiNii:1

    • 40nm ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU (2014)
  • Shiba Kazutoshi ID: 9000392717173

    Articles in CiNii:1

    • Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films (1992)
  • Shiba Kazutoshi ID: 9000392735006

    Articles in CiNii:1

    • Luminescence from Thermally Oxidized Porous Silicon (1993)
  • Shiba Kazutoshi ID: 9000401630154

    Articles in CiNii:1

    • Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films (1992)
  • Shiba Kazutoshi ID: 9000401634297

    Articles in CiNii:1

    • Luminescence from Thermally Oxidized Porous Silicon (1993)
  • Shiba Kazutoshi ID: 9000401668827

    Articles in CiNii:1

    • Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots (1997)
  • Shiba Kazutoshi ID: 9000401671190

    Articles in CiNii:1

    • Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation (1998)
  • Shiba Kazutoshi ID: 9000401679981

    Articles in CiNii:1

    • 1999-04-30 (1999)
  • Shiba Kazutoshi ID: 9000401718918

    Articles in CiNii:1

    • 2003-09-15 (2003)
  • Shiba Kazutoshi ID: 9000401764551

    Articles in CiNii:1

    • 2007-03-08 (2007)
  • Shiba Kazutoshi ID: 9000402028467

    Articles in CiNii:1

    • Development of highly reliable static random access memory for 40-nm embedded split gate-MONOS flash memory (2015)
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