Search Results1-8 of  8

  • SHIH Jiaw-Ren ID: 9000005607446

    Taiwan Semiconductor Manufacturing Company, Reliability Assurance Department (2000 from CiNii)

    Articles in CiNii:2

    • Analytical Model of Human Body Model Electrostatic Discharge Current Distribution and Novel Electrostatic Discharge Protection Structure (1999)
    • The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability (2000)
  • SHIH Jiaw-Ren ID: 9000045943378

    Department of Electrical Engineering, Tsing-Hua University:Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park (1998 from CiNii)

    Articles in CiNii:1

    • A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors (1998)
  • SHIH Jiaw-Ren ID: 9000107383630

    Articles in CiNii:1

    • The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process (1999)
  • Shih Jiaw-Ren ID: 9000258150308

    Taiwan Semiconductor Manufacturing Company, Reliability Assurance Department (2000 from CiNii)

    Articles in CiNii:1

    • The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability. (2000)
  • Shih Jiaw-Ren ID: 9000401676448

    Articles in CiNii:1

    • A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)- NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors (1998)
  • Shih Jiaw-Ren ID: 9000401682115

    Articles in CiNii:1

    • Analytical Model of Human Body Model Electrostatic Discharge Current Distribution and Novel Electrostatic Discharge Protection Structure (1999)
  • Shih Jiaw-Ren ID: 9000401685522

    Articles in CiNii:1

    • The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process (1999)
  • Shih Jiaw-Ren ID: 9000401689780

    Articles in CiNii:1

    • The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability (2000)
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