Search Results1-20 of  197

  • Shimizu Hirofumi ID: 9000009441040

    Articles in CiNii:1

    • Effect of Metals on Growth of Native Oxide on Silicon(001)Surfaces (2000)
  • Shimizu Hirofumi ID: 9000009441065

    Articles in CiNii:1

    • Effect of Aluminum on Thermal Oxide Growth and Oxide Charges in Silicon(001) Wafers Studied by using AC Surface Photovoltage and X-Ray Photoelectron Spectroscopy (2001)
  • Shimizu Hirofumi ID: 9000009441070

    Articles in CiNii:1

    • Fabrication of Tungsten Tips for a Scanning Tunneling Microscope to Increase the Resolution of Images of the Surfaces of Silicon Wafers (2001)
  • Shimizu Hirofumi ID: 9000009805457

    Articles in CiNii:1

    • Metal-Induced Alternating Current Surface Photovoltage in Silicon: Atomic Bridging-Type Oxide Charge and Schottky Barrier-Type Negative Charge (2003)
  • Shimizu Hirofumi ID: 9000015605317

    Articles in CiNii:1

    • Study of Metal-induced Oxide Charge on the Surface of Silicon Wafers Using Alternating Current Surface Photovoltage Measurements (2003)
  • SHIMIZU Hirofumi ID: 9000019164645

    Articles in CiNii:1

    • Characterization of Sol-Gel-Derived Crystalline ZrO₂-Y₂O₃ Thin Films (2012)
  • Shimizu Hirofumi ID: 9000025068250

    Articles in CiNii:1

    • Temperature-programmed desorption analyses of sol-gel deposited and crystallized HfO2 films (2007)
  • Shimizu Hirofumi ID: 9000025072655

    Articles in CiNii:1

    • Characteristics of sol-gel-derived and crystallized HfO2 thin films dependent on sol solution (2010)
  • Shimizu Hirofumi ID: 9000025097021

    Articles in CiNii:1

    • Characterization of sol-gel derived and crystallized ZrO2 thin films (2009)
  • Shimizu Hirofumi ID: 9000241501582

    Articles in CiNii:1

    • Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO₂ Growth Due to Catalytic Action by Au in Thermally Oxidized Au-Precipitated n-Type Si(001) Surfaces (2013)
  • Shimizu Hirofumi ID: 9000241501764

    Articles in CiNii:1

    • Enhanced and Retarded SiO₂ Growth on Thermally Oxidized Fe-Contaminated n-Type Si(001) Surfaces (2013)
  • SHIMIZU Hirofumi ID: 9000241519493

    Articles in CiNii:1

    • Enhancement and Retardation Mechanism of Ultra-Thin SiO₂ Growth on Thermally Oxidized Cr-Contaminated n-Type Si(001) Surfaces (2013)
  • SHIMIZU Hirofumi ID: 9000323301552

    Articles in CiNii:1

    • Summary of Characterizations of Sol-Gel-Derived Crystalline HfO₂, ZrO₂, ZrO₂-Y₂O₃ Thin Films on Si(001) Wafers with High Dielectric Constant (2016)
  • SHIMIZU Hirofumi ID: 9000337071949

    Articles in CiNii:1

    • Summary of Alternating Current Surface Photovoltage Measurements in Silicon Semiconductor Wafers (2016)
  • SHIMIZU Hirofumi ID: 9000377385844

    Articles in CiNii:1

    • Summary of Crystalline Defects Control in Silicon (2017)
  • SHIMIZU HIROFUMI ID: 9000002825159

    Articles in CiNii:6

    • 反応は等価クラスに含まれるのか? (2002)
    • What Are the Shared Mechanisms of Therapy for PTSD : Summary of Spates' Article (2004)
    • The Specialty in Behavior Analysis Services : The Behavior Analyst Certification Board and Task List (2003)
  • SHIMIZU Hirofumi ID: 9000000031297

    Ishigaki Tropical Station, Seikai National Fisheries Research Institute (2002 from CiNii)

    Articles in CiNii:3

    • 石垣島周辺海域からドレッジにより採集された底生生物(予報)沖縄生物学会第34回大会講演要旨 (1998)
    • Bone Abnormarity of Hatchery-reared Bluefin Tuna Thunnus orientalis (2002)
    • Notes on offshore fisheries resources of the sub-tropical regions in Japan (1998)
  • SHIMIZU Hirofumi ID: 9000000098254

    Semiconductor & Integrated Circuits Division, Hitachi Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • Computer Simulation of Stress Induced Dislocation Multiplication in Large-Diameter Silicon Wafer in High-Temperature Device Processing (1997)
  • SHIMIZU Hirofumi ID: 9000000098533

    Semiconductor & Integrated Circuits Division, Hitachi Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • Monitoring of Ultra-Trace Contaminants on Silicon Wafers for ULSI by a Novel Impurity Extraction and AC Surface Photovoltage Methods (1997)
  • SHIMIZU Hirofumi ID: 9000000318600

    Process Engineering Development Department,Semiconductor Technology Develpment Center,Semiconductor and Integrated Circuits Div.,Hitachi,Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • Effects of surface morphology on device characteristics in silicon wafer (1997)
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