Search Results1-20 of  22

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  • SHINOYAMA Seiji ID: 9000002884933

    Articles in CiNii:4

    • CZシリコン結晶の育成および評価 (大規模集積回路<特集>) (1978)
    • 0.8mm,700MHzフェライト電波整合体(技術談話室) (1975)
    • Magnetic Characteristic Changes in Polished Ferrites : Worked Layers of Ferrites (2nd Report) (1977)
  • SHINOYAMA Seiji ID: 9000005534729

    Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1980 from CiNii)

    Articles in CiNii:1

    • Growth of Dislocation-Free Undoped InP Crystals (1980)
  • SHINOYAMA Seiji ID: 9000005732371

    Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1979 from CiNii)

    Articles in CiNii:1

    • In-Depth Distribution of Stacking Faults in Thermally-Oxidized Czochralski Silicon Wafers (1979)
  • SHINOYAMA Seiji ID: 9000253324138

    R & D Laboratories I. Niooon Steel Corp. (1988 from CiNii)

    Articles in CiNii:1

    • Ring-Likely Distributed Stacking Faults in CZ-Si Wafers (1988)
  • SHINOYAMA Seiji ID: 9000253325356

    Electronics R&D Laboratories, Nippon Steel Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Defect formation in the cooling process after CZ-Si growth (1991)
  • SHINOYAMA Seiji ID: 9000254269020

    日本電信電話公社武蔵野電気通信研究所 (1977 from CiNii)

    Articles in CiNii:1

    • Magnetic Characteristic Changes in Polished Ferrites:Worked Layers of Ferrites (2nd Report) (1977)
  • Shinoyama Seiji ID: 9000252755523

    The Electrical Comminucation Laboratories, Nippon Telegraph and Telephone Public Corporation (1974 from CiNii)

    Articles in CiNii:1

    • Gigantic Helical Dislocations in Czochralski-Grown Gd<SUB>3</SUB>Ga<SUB>5</SUB>O<SUB>12</SUB> Single Crystal (1974)
  • Shinoyama Seiji ID: 9000252756406

    Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1979 from CiNii)

    Articles in CiNii:1

    • In-depth distribution of stacking faults in thermally-oxidized Czochralski silicon wafers. (1979)
  • Shinoyama Seiji ID: 9000252758485

    Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1984 from CiNii)

    Articles in CiNii:1

    • Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal (1984)
  • Shinoyama Seiji ID: 9000252948006

    Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1980 from CiNii)

    Articles in CiNii:1

    • Growth of dislocation-free undoped InP crystals. (1980)
  • Shinoyama Seiji ID: 9000252969859

    R & D Laboratories I, Nippon Steel Corporation (1989 from CiNii)

    Articles in CiNii:1

    • Formation Process of Stacking Faults with Ringlike Distribution in CZ–Si Wafers (1989)
  • Shinoyama Seiji ID: 9000252983557

    Electronics Research Laboratories, Nippon Steel Corporation (1992 from CiNii)

    Articles in CiNii:1

    • Application of Copper-Decoration Method to Characterize As-Grown Czochralski-Silicon (1992)
  • Shinoyama Seiji ID: 9000392679627

    Articles in CiNii:1

    • Gigantic Helical Dislocations in Czochralski-Grown Gd<SUB>3</SUB>Ga<SUB>5</SUB>O<SUB>12</SUB> Single Crystal (1974)
  • Shinoyama Seiji ID: 9000392690967

    Articles in CiNii:1

    • Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal (1984)
  • Shinoyama Seiji ID: 9000392704802

    Articles in CiNii:1

    • Formation Process of Stacking Faults with Ringlike Distribution in CZ–Si Wafers (1989)
  • Shinoyama Seiji ID: 9000392723953

    Articles in CiNii:1

    • Application of Copper-Decoration Method to Characterize As-Grown Czochralski-Silicon (1992)
  • Shinoyama Seiji ID: 9000401578634

    Articles in CiNii:1

    • Gigantic Helical Dislocations in Czochralski-Grown Gd3Ga5O12Single Crystal (1974)
  • Shinoyama Seiji ID: 9000401584938

    Articles in CiNii:1

    • In-Depth Distribution of Stacking Faults in Thermally-Oxidized Czochralski Silicon Wafers (1979)
  • Shinoyama Seiji ID: 9000401587065

    Articles in CiNii:1

    • Growth of Dislocation-Free Undoped InP Crystals (1980)
  • Shinoyama Seiji ID: 9000401596281

    Articles in CiNii:1

    • Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal (1984)
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