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  • Shiojima Kenji ID: 9000024948277

    Articles in CiNii:1

    • Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts (Special Issue : Advanced Plasma Science and its Applications for Nitrides and Nanomaterials) (2013)
  • Shiojima Kenji ID: 9000025031359

    Articles in CiNii:1

    • Theoretical investigation of GaN-based diodes with a recessed composite Schottky-barrier structure (Special issue: Solid state devices and materials) (2009)
  • Kenji Shiojima ID: 9000402231871

    Articles in CiNii:1

    • Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy (2019)
  • SHIMADA Jingoro ID: 9000004820766

    NTT Photonics Laboratories (2005 from CiNii)

    Articles in CiNii:25

    • Relatedness between the Coagulase Gene 3'-End Region and Coagulase Serotypes among Staphylococcus aureus Strains (2001)
    • Comparative uptake of grepafloxacin and ciprofloxacin by a human monocytic cell line, THP-1 (2000)
    • Evaluation of the activity of antimicrobial agents against Legionella pneumophila multiplying in a human monocytic cell line, THP-1, and an alveolar epithelial cell line, A549 (2000)
  • SHIOJIMA KENJI ID: 9000006408793

    Showa College of Pharmaceutical Sciences (1987 from CiNii)

    Articles in CiNii:1

    • Acid-Induced Rearrangement of Triterpenoid Hydrocarbons Belonging to the Hopane and Migrated Hopane Series(Organic,Chemical) (1987)
  • SHIOJIMA KENJI ID: 9000254688370

    Articles in CiNii:1

    • Fern constituents. Onoceroid,.ALPHA.-onoceradiene,serratene and onoceranoxide,isolated from Lemmaphyllum microphyllum varieties. (1982)
  • SHIOJIMA KENJI ID: 9000254696938

    Showa College of Pharmaceutical Sciences (1987 from CiNii)

    Articles in CiNii:1

    • Acid-induced rearrangement of triterpenoid hydrocarbons belonging to the hopane and migrated hopane series. (1987)
  • SHIOJIMA KENJI ID: 9000392639644

    Articles in CiNii:1

    • Composite Constituents : Aliphatics and Triterpenoids isolated from the whole Plants of Ixeris debilis and I. dentata (1983)
  • SHIOJIMA Kenji ID: 9000002176404

    Graduate School of Engineering, University of Fukui (2007 from CiNii)

    Articles in CiNii:1

    • Optimum Rapid Thermal Activation for Mg-doped p-type GaN (2007)
  • SHIOJIMA Kenji ID: 9000004745492

    Graduate School of Electrical and Electronics Engineering, University of Fukui (2013 from CiNii)

    Articles in CiNii:41

    • Fabrication and characterizations of AlGaN/GaN HEMTs with a buried p-layer (2002)
    • Fabrication and evaluation of short-gate AlGaN/GaN HEMTs (2002)
    • Effect of SiN films on thermal stability of AlGaN/GaN 2DEG structures (2003)
  • SHIOJIMA Kenji ID: 9000004765235

    NTT System Electronics Labs (1998 from CiNii)

    Articles in CiNii:6

    • 高速無線アクセス用シリコンLSIの開発 (1997)
    • A GHz-Band IF Si Chip-Set and Dielectric Root-Nyquist Filter for High-Speed Wireless Access Systems (1998)
    • A GHz-Band IF Si Chip-Set and Dielectric Root-Nyquist Filter for High-Speed Wireless Access Systems (1998)
  • SHIOJIMA Kenji ID: 9000004777365

    NTT Photonics Laboratories (2002 from CiNii)

    Articles in CiNii:12

    • Process Technique for GaN Related Electron Devices (2002)
    • Properties of Wide Band Gap Semiconductors for electron Device Fabrication (2002)
    • Current transport mechanism of metal/p-GaN contacts (2002)
  • SHIOJIMA Kenji ID: 9000005197780

    Showa College of Pharmaceutical Sciences (1996 from CiNii)

    Articles in CiNii:1

    • Composite Constituents: Thirty-Nine Triterpenoids Including Two Novel Compounds from Ixeris chinensis (1996)
  • SHIOJIMA Kenji ID: 9000006476369

    Graduate School of Engineering, University of Fukui (2009 from CiNii)

    Articles in CiNii:22

    • I-V and C-V characteristics of p-GaN Schottky contacts : Metal work function dependence (2007)
    • Current transport mechanism of metal/p-GaN contacts and its recent progress (2007)
    • Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs (2007)
  • SHIOJIMA Kenji ID: 9000006838467

    Graduate School of Engineering, University of Fukui (2009 from CiNii)

    Articles in CiNii:3

    • Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures (2009)
    • Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures (2008)
    • Simulation of tunneling contact resistivity in non-polar AlGaN/GaN heterostructures (2008)
  • SHIOJIMA Kenji ID: 9000024769798

    Articles in CiNii:1

    • I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts (2009)
  • SHIOJIMA Kenji ID: 9000107306135

    Photonics Laboratories, NTT Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Device Temperature Measurement of Highly Biased AIGaN/GaN High-Electron-Mobility Transistors (2003)
  • SHIOJIMA Kenji ID: 9000107321426

    Graduate school of Electrical and Electronics Engineering, University of Fukui (2008 from CiNii)

    Articles in CiNii:1

    • I-V and C-V characteristics of p-GaN Schottky contacts : Carrier concentration and metal work function dependences (2008)
  • SHIOJIMA Kenji ID: 9000107322093

    Graduate School of Electrical and Electronics Engineering, University of Fukui (2008 from CiNii)

    Articles in CiNii:1

    • Reliability evaluation of MOCVD-grown InP/InGaAs HBTs (2008)
  • SHIOJIMA Kenji ID: 9000107352530

    NTT Photonics Laboratories (2004 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures (2004)
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