Search Results1-16 of  16

  • SHIOZAWA Katsuomi ID: 9000001655414

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Isolation for Giga-bit Scale Integration (GSI) (1997)
  • SHIOZAWA Katsuomi ID: 9000002169036

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2005 from CiNii)

    Articles in CiNii:1

    • High Power operation of GaN-based laser diode with high slope efficiency (2005)
  • SHIOZAWA Katsuomi ID: 9000004781264

    Advanced Technology R&D Center, Mitsubishi Electric Corp. (2005 from CiNii)

    Articles in CiNii:8

    • Development of ultra-fine trench isolation using a simulation technique (1996)
    • Sub-0.1μm CMOS Technology : Elevated Source/Drain MOSFETs (2000)
    • Sub-0.1μm CMOS Technology : Elevated Source/Drain MOSFETs (2000)
  • SHIOZAWA Katsuomi ID: 9000005577079

    Process & Manufacturing Engineering Center Semiconductor Company, Toshiba Corp. (2002 from CiNii)

    Articles in CiNii:15

    • Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs (1998)
    • Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current (2000)
    • Recovery of SEM Image by In-Situ Cleaning of Contaminated Objective Aperture (1996)
  • SHIOZAWA Katsuomi ID: 9000045943324

    Advanced Technology R & D Center, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance (1998)
  • SHIOZAWA Katsuomi ID: 9000045949464

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process (1996)
  • SHIOZAWA Katsuomi ID: 9000107334126

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors (2001)
  • Shiozawa Katsuomi ID: 9000258155261

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors. (2001)
  • Shiozawa Katsuomi ID: 9000401661091

    Articles in CiNii:1

    • Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process (1996)
  • Shiozawa Katsuomi ID: 9000401669873

    Articles in CiNii:1

    • Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Isolated by an Ultra-Fine Trench (1997)
  • Shiozawa Katsuomi ID: 9000401678257

    Articles in CiNii:1

    • Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance (1998)
  • Shiozawa Katsuomi ID: 9000401678290

    Articles in CiNii:1

    • Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors (1998)
  • Shiozawa Katsuomi ID: 9000401686094

    Articles in CiNii:1

    • Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance (1999)
  • Shiozawa Katsuomi ID: 9000401699809

    Articles in CiNii:1

    • Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors (2001)
  • Shiozawa Katsuomi ID: 9000401797703

    Articles in CiNii:1

    • Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts (2011)
  • Shiozawa Katsuomi ID: 9000401998572

    Articles in CiNii:1

    • Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts (2011)
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