Search Results1-20 of  27

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  • Stutzmann Martin ID: 9000007231797

    Articles in CiNii:1

    • The origin of light-induced metastable defects in amorphous silicon (1991)
  • STUTZMANN Martin ID: 9000001263515

    Walter Schottky Institut, Technische Universitat Munchen (2004 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures (2004)
  • STUTZMANN Martin ID: 9000001720293

    Walter Schottky Institut, Technische Universitat Munchen (1996 from CiNii)

    Articles in CiNii:1

    • Defects in Si Thin-Film Transistors Studied by Spin-Dependent Transport (1996)
  • STUTZMANN Martin ID: 9000005585968

    Walter Schottky Institute, TU-Munich, Am Coulombwall (1999 from CiNii)

    Articles in CiNii:4

    • Nitrogen Effusion and Self-Diffusion in Ga^<14>N/Ga^<15>N Isotope Heterostructures (1998)
    • Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3 (OOO1) (1998)
    • Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy (1998)
  • STUTZMANN Martin ID: 9000005647434

    Walter Schottky Institut, Technische Universitat Munchen (2002 from CiNii)

    Articles in CiNii:2

    • Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells (1999)
    • Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapour Deposition for Thin Film Solar Cell Applications (2002)
  • STUTZMANN Martin ID: 9000045941917

    Walter Schottky Institut (1999 from CiNii)

    Articles in CiNii:1

    • Polycrystalline Silicon Thin Films Produced by Interference Laser Crystallization of Amorphous Silicon (1999)
  • STUTZMANN Martin ID: 9000107307689

    Walter Schottky Institut, Technische Universitat Munchen (2004 from CiNii)

    Articles in CiNii:1

    • Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN (2004)
  • STUTZMANN Martin ID: 9000107363880

    Walter Schottky Institut, Technische Universitat Munchen (2004 from CiNii)

    Articles in CiNii:1

    • Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy (2004)
  • STUTZMANN Martin ID: 9000107383119

    Walter Schottky Institut, Technische Universitat Munchen (1997 from CiNii)

    Articles in CiNii:1

    • Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors (1997)
  • STUTZMANN Martin ID: 9000253325155

    Max-Planck-Institute for Solid state Research (1991 from CiNii)

    Articles in CiNii:1

    • The origin of light-induced metastable defects in amorphous silicon (1991)
  • Stutzmann Martin ID: 9000053689114

    Articles in CiNii:1

    • Thin Film Solar Cells Prepared on Low Thermal Budget Polycrystalline Silicon Seed Layers (2010)
  • Stutzmann Martin ID: 9000258134864

    Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching, 85748, Germany (1997 from CiNii)

    Articles in CiNii:1

    • Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors. (1997)
  • Stutzmann Martin ID: 9000258143550

    Walter Schottky Institut, Technische Universität München, Am Coulombwall, D 85748 Garching, Germany (1999 from CiNii)

    Articles in CiNii:1

    • Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells. (1999)
  • Stutzmann Martin ID: 9000258172149

    Walter Schottky Institut, Technische Universität München, Am Coulombwall (2004 from CiNii)

    Articles in CiNii:1

    • Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN (2004)
  • Stutzmann Martin ID: 9000258173338

    Walter Schottky Institut, Technische Universität München (2004 from CiNii)

    Articles in CiNii:1

    • Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy (2004)
  • Stutzmann Martin ID: 9000258173437

    Walter Schottky Institut, Technische Universität München (2004 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures (2004)
  • Stutzmann Martin ID: 9000283172342

    Articles in CiNii:1

    • Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff. (1999)
  • Stutzmann Martin ID: 9000401662448

    Articles in CiNii:1

    • Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors (1997)
  • Stutzmann Martin ID: 9000401671848

    Articles in CiNii:1

    • Nitrogen Effusion and Self-Diffusion in Ga14N/Ga15N Isotope Heterostructures (1998)
  • Stutzmann Martin ID: 9000401676320

    Articles in CiNii:1

    • Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) (1998)
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