Search Results1-20 of  142

  • Sugawa Shigetoshi ID: 9000024933712

    Articles in CiNii:1

    • New statistical evaluation method for the variation of metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2007)
  • Sugawa Shigetoshi ID: 9000024933835

    Articles in CiNii:1

    • Low leakage current and low resistivity p[+]n diodes on Si(110) fabricated by Ga[+] and B[+] dual ion implantation for low temperature source-drain activation (Special issue: Solid state devices and materials) (2007)
  • Sugawa Shigetoshi ID: 9000024980508

    Articles in CiNii:1

    • Impact of channel direction dependent low field hole mobility on (100) orientation silicon surface (Special issue: Solid state devices and materials) (2011)
  • Sugawa Shigetoshi ID: 9000025038902

    Articles in CiNii:1

    • Performance comparison of ultrathin fully depleted silicon-on-insulator inversion-, intrinsic-, and accumulation-mode metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • SUGAWA Shigetoshi ID: 9000001622861

    Graduate School of Engineering, Tohoku University (2010 from CiNii)

    Articles in CiNii:35

    • The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment (2001)
    • Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma (2001)
    • Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation (2001)
  • SUGAWA Shigetoshi ID: 9000001722588

    Device Development Center, CANON INC. (1995 from CiNii)

    Articles in CiNii:1

    • An Amorphous Avalanche Photo-Diode with a Large Conduction Band Edge Discontinuity (1995)
  • SUGAWA Shigetoshi ID: 9000002177948

    Graduate School of Engineering, Tohoku University (2007 from CiNii)

    Articles in CiNii:1

    • High Sensitivity Dynamic Range Enhanced CMOS Imager with Noise Suppression (2007)
  • SUGAWA Shigetoshi ID: 9000014498194

    Articles in CiNii:3

    • Key factor for success during the technology development stage of Japanese manufacturing corporations (2011)
    • 機能・工程設計フレームワークと機能品質完結生産(技術経営, 第20回年次学術大会講演要旨集I) (2005)
    • Development of the Hierarchical Production System Using the Modularized Design of Group Plan Product (2007)
  • SUGAWA Shigetoshi ID: 9000016265052

    TOHOKU University (2006 from CiNii)

    Articles in CiNii:1

    • Development and Operation of a Synchronized Production System Using a Virtual Production Concept (2006)
  • SUGAWA Shigetoshi ID: 9000021318062

    Graduate School of Engineering, Management of Science and Technology Department, Tohoku University (2006 from CiNii)

    Articles in CiNii:1

    • Research of invention evaluation for patent application decision making support (2006)
  • SUGAWA Shigetoshi ID: 9000107305884

    Graduate School of Engineering, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region (2003)
  • SUGAWA Shigetoshi ID: 9000107306332

    Graduate School of Engineering, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma (2003)
  • SUGAWA Shigetoshi ID: 9000107306480

    Management of Science and Technology Department Graduate School of Engineering, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • A Technology for Reducing Flicker Noise for ULSI Applications (2003)
  • SUGAWA Shigetoshi ID: 9000107306829

    Management of Science & Technology Department School of Engineering, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • Ferroelectric Sr_2(Ta_<1-x>, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment (2003)
  • SUGAWA Shigetoshi ID: 9000107306898

    Department of Electronic Engineering, Tohoku University (2001 from CiNii)

    Articles in CiNii:1

    • Interconnect and Substrate Structure for Gigascale Integration (2001)
  • SUGAWA Shigetoshi ID: 9000107325466

    Articles in CiNii:1

    • Tribological Study for Low Shear Force CMP Process on Damascene Interconnects (2009)
  • SUGAWA Shigetoshi ID: 9000107325473

    Articles in CiNii:1

    • Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement (2009)
  • SUGAWA Shigetoshi ID: 9000107344078

    Department of Electronic Engineering, Graduate School of Engineering, Tohoku University (2005 from CiNii)

    Articles in CiNii:1

    • A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing (2005)
  • SUGAWA Shigetoshi ID: 9000107375074

    Articles in CiNii:1

    • High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance (2010)
  • SUGAWA Shigetoshi ID: 9000107383157

    Device Development Center, Canon Inc. (1996 from CiNii)

    Articles in CiNii:1

    • Amorphous Avalanche Photodiode with Large Conduction Band Edge Discontinuity (1996)
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