Search Results1-20 of  43

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  • SUGIYAMA YOSHINOBU ID: 9000005269658

    日本赤十字社医療センター薬剤部 (1982 from CiNii)

    Articles in CiNii:1

    • 自動分包機の使用経験 : その2 (1982)
  • SUGIYAMA Yoshinobu ID: 9000000016301

    Articles in CiNii:5

    • IV. Micro Magnetic Sensor (1996)
    • Fabrication Technologies Inorganic Functional Thin Films fo Sensors and Actuators. Trends on Semiconductor Magnetic Sensors and Giast Magnetoresistance Devices. (1997)
    • 電子技術総合研究所 (2000)
  • SUGIYAMA Yoshinobu ID: 9000000707953

    Departments of pharmacology, Yokohama City University School of Medicine (2000 from CiNii)

    Articles in CiNii:2

    • _L-DOPA Cyclohexyl Ester Is a Novel Potent and Relatively Stable Competitive Antagonist Against _L-DOPA Among Several _L-DOPA Ester Compounds (2000)
    • _L-DOPA Cyclohexyl Ester Is a Novel Stable and Potent Competitive Antagonist Against _L-DOPA, as Compared to _L-DOPA Methyl Ester (1997)
  • SUGIYAMA Yoshinobu ID: 9000005653426

    Electrotechnical Laboratory (1994 from CiNii)

    Articles in CiNii:1

    • Critical Layer Thickness of n-In_<0.52>Al_<0.48>AS/In_<0.8>Ga_<0.2>As/In_<0.52>Al_<0.48>AS Pseudomorphic Heterostructures Studied by Photoluminescence (1994)
  • SUGIYAMA Yoshinobu ID: 9000107382954

    Electrotechnical Laboratory (1996 from CiNii)

    Articles in CiNii:1

    • Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope (1996)
  • Sugiyama Yoshinobu ID: 9000021149753

    Department of Pharmacology, Yokohama City University School of Medicine (1997 from CiNii)

    Articles in CiNii:1

    • Studies on novel, stable and potent competitive antagonists against L-DOPA (1997)
  • Sugiyama Yoshinobu ID: 9000023085105

    Articles in CiNii:1

    • A Numerical Method for Generating Tollmien-Schlichting Waves (1988)
  • Sugiyama Yoshinobu ID: 9000252957712

    Electrotechnical Laboratory (1986 from CiNii)

    Articles in CiNii:1

    • InP <I>PN</I> Junction Waveguide Made by Mg-Ion Implantation (1986)
  • Sugiyama Yoshinobu ID: 9000252959723

    Electrotechnical Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • Self-Aligned Inversion-Mode InP MISFET (1987)
  • Sugiyama Yoshinobu ID: 9000252983454

    Electrotechnical Laboratory (1992 from CiNii)

    Articles in CiNii:1

    • Dependence of Hooge Parameter of Compound Semiconductors on Temperature (1992)
  • Sugiyama Yoshinobu ID: 9000252984926

    Electrotechnical Laboratory (1993 from CiNii)

    Articles in CiNii:1

    • Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure (1993)
  • Sugiyama Yoshinobu ID: 9000252988567

    Electrotechnical Laboratory (1993 from CiNii)

    Articles in CiNii:1

    • V-Shaped Gate High Electron Mobility Transistor (VHEMT) (1993)
  • Sugiyama Yoshinobu ID: 9000253276252

    Electrotechnical Laboratory, Ministry of International Trade and Industry (1983 from CiNii)

    Articles in CiNii:1

    • Hall Effects in Locally Inverted Magnetic Fields (1983)
  • Sugiyama Yoshinobu ID: 9000253279996

    Electrotechnical Laboratory, Ministry of International Trade and Industry (1978 from CiNii)

    Articles in CiNii:1

    • Characteristics of the Directional Galvanomagnetic Device (1978)
  • Sugiyama Yoshinobu ID: 9000258120537

    Articles in CiNii:1

    • Annealing Behavior of Irradiation-Induced Damage in an AlGaAs/GaAs Heterostructure by Low-Energy Electron Beam. (1994)
  • Sugiyama Yoshinobu ID: 9000258121044

    Electrotechnical Laboratory, 1–1–4 Umesono, Tukuba, Ibaraki 305 (1994 from CiNii)

    Articles in CiNii:1

    • Critical Layer Thickness of n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As Pseudomorphic Heterostructures Studied by Photoluminescence. (1994)
  • Sugiyama Yoshinobu ID: 9000258131899

    Electrotechnical Laboratory, 1–1–4 Umezono Tsukuba–shi, Ibaraki 305, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope. (1996)
  • Sugiyama Yoshinobu ID: 9000258135885

    Electrotechnical Laboratory, 1–1–4 Umezono Tsukuba–shi, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope. (1997)
  • Sugiyama Yoshinobu ID: 9000258137960

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Difference in Diffusion Length of Ga Atoms under As2 and As4 Flux in Molecular Beam Epitaxy. (1997)
  • Sugiyama Yoshinobu ID: 9000258140093

    Electrotechnical Laboratory (ETL), Umezono 1–1–4, Tsukuba 305, Japan (1998 from CiNii)

    Articles in CiNii:1

    • THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field. (1998)
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