Search Results1-9 of  9

  • SUGIZAKI Taro ID: 9000001719170

    Fujitsu Laboratories Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs (2000)
  • SUGIZAKI Taro ID: 9000002170498

    FUJITSU LABORATOIRES Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Ultra High Density HfO2-Nanodot Memory for Flash Memory Scaling (2005)
  • SUGIZAKI Taro ID: 9000006394418

    Sony Corporation (2007 from CiNii)

    Articles in CiNii:2

    • High-speed Operation SRAM cell using Bulk-type Thyristor (2007)
    • Thyristor for SRAM Application (2007)
  • SUGIZAKI Taro ID: 9000107306714

    Fujitsu Laboratories Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • High Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation (2003)
  • SUGIZAKI Taro ID: 9000107334362

    Fujitsu Laboratories, Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories (2001)
  • Sugizaki Taro ID: 9000024957992

    Articles in CiNii:1

    • Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling (2006)
  • Sugizaki Taro ID: 9000258166284

    Fujitsu Laboratories Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation (2003)
  • Sugizaki Taro ID: 9000401697892

    Articles in CiNii:1

    • Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories (2001)
  • Sugizaki Taro ID: 9000401714836

    Articles in CiNii:1

    • Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation (2003)
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