Search Results1-20 of  41

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  • SUMIYA Masatomo ID: 9000403928436

    Articles in CiNii:1

    • Perovskite Solar Cells Prepared by Advanced Three-Step Method Using Additional HC(NH2)2I Spin-Coating: Efficiency Improvement with Multiple Bandgap Structure （2018）
  • Sumiya Masatomo ID: 9000403940157

    Articles in CiNii:1

    • Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams （2018）
  • SUMIYA MASATOMO ID: 9000345210488

    National Institute for Materials Science （2016 from CiNii）

    Articles in CiNii:1

    • Control of defect for improvement of III-V nitride solar cell （2016）
  • SUMIYA Masatomo ID: 9000005604611

    Advanced Photovoltaics Center, National Institute for Materials Science （2010 from CiNii）

    Articles in CiNii:6

    • Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition （2009）
    • Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes （2009）
    • Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template （2010）
  • SUMIYA Masatomo ID: 9000005658755

    Research Laboratory of Engineering Materials, Tokyo Institute of Technology （1995 from CiNii）

    Articles in CiNii:1

    • Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration （1995）
  • SUMIYA Masatomo ID: 9000019052676

    National Institute for Materials Science （2012 from CiNii）

    Articles in CiNii:1

    • Reply to "Comment on 'Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes'" [Appl. Phys. Express 2 (2009) 092201] （2012）
  • SUMIYA Masatomo ID: 9000107306958

    National Institute for Materials Science （2009 from CiNii）

    Articles in CiNii:1

    • Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers （2009）
  • SUMIYA Masatomo ID: 9000107324290

    Department of Electrical and Electronic Engineering, Shizuoka University （2004 from CiNii）

    Articles in CiNii:1

    • Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy （2004）
  • SUMIYA Masatomo ID: 9000241154259

    Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency （2012 from CiNii）

    Articles in CiNii:1

    • Application of III-V nitride films to photovoltaic devices （2012）
  • SUMIYA Masatomo ID: 9000241154313

    Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency （2012 from CiNii）

    Articles in CiNii:1

    • Application of III-V nitride films to photovoltaic devices （2012）
  • SUMIYA Masatomo ID: 9000241155799

    Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency （2012 from CiNii）

    Articles in CiNii:1

    • Application of III-V nitride films to photovoltaic devices （2012）
  • SUMIYA Masatomo ID: 9000253326640

    Department of Electrical and Electronic Engineering, Shizuoka University （1997 from CiNii）

    Articles in CiNii:1

    • Quantative analysis of photo-induced effect in amorphous silicon by laser desorption time of flight mass spectroscopy （1997）
  • SUMIYA Masatomo ID: 9000253327778

    Department of Electrical & Electronic Engineering, Shizuoka University （2001 from CiNii）

    Articles in CiNii:1

    • Polar surface structure of wurtzite GaN epitaxial film grown by MOCVD （2001）
  • Sumiya Masatomo ID: 9000258125446

    Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan （1995 from CiNii）

    Articles in CiNii:1

    • Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration. （1995）
  • Sumiya Masatomo ID: 9000258145427

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Hamamatsu 432–8561, Japan （1999 from CiNii）

    Articles in CiNii:1

    • Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition. （1999）
  • Sumiya Masatomo ID: 9000258163224

    Department of Electrical & Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan （2002 from CiNii）

    Articles in CiNii:1

    • Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O3 (111) Substrate by Metalorganic Chemical Vapor Deposition. （2002）
  • Sumiya Masatomo ID: 9000283187309

    Department of Electrical and Electronic Engineering, Shizuoka University （2003 from CiNii）

    Articles in CiNii:1

    • Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co. （2003）
  • Sumiya Masatomo ID: 9000299561482

    Wide Bandgap Material Group, National Institute for Materials Science (NIMS) （2015 from CiNii）

    Articles in CiNii:1

    • Optical properties of Ga<sub>0.82</sub>In<sub>0.18</sub>N <i>p</i>-<i>n</i> homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy （2015）
  • Sumiya Masatomo ID: 9000401566196

    Articles in CiNii:1

    • Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition （2009）
  • Sumiya Masatomo ID: 9000401566944

    Articles in CiNii:1

    • Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes （2009）
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