Search Results1-20 of  40

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  • SUMIYA Masatomo ID: 9000403098455

    Articles in CiNii:1

    • Perovskite Solar Cells Prepared by Advanced Three-Step Method Using Additional HC(NH2)2I Spin-Coating: Efficiency Improvement with Multiple Bandgap Structure (2018)
  • Sumiya Masatomo ID: 9000403143801

    Articles in CiNii:1

    • Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams (2018)
  • SUMIYA MASATOMO ID: 9000345210488

    National Institute for Materials Science (2016 from CiNii)

    Articles in CiNii:1

    • Control of defect for improvement of III-V nitride solar cell (2016)
  • SUMIYA Masatomo ID: 9000005604611

    Advanced Photovoltaics Center, National Institute for Materials Science (2010 from CiNii)

    Articles in CiNii:6

    • Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition (2009)
    • Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes (2009)
    • Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template (2010)
  • SUMIYA Masatomo ID: 9000005658755

    Research Laboratory of Engineering Materials, Tokyo Institute of Technology (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration (1995)
  • SUMIYA Masatomo ID: 9000019052676

    National Institute for Materials Science (2012 from CiNii)

    Articles in CiNii:1

    • Reply to "Comment on 'Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes'" [Appl. Phys. Express 2 (2009) 092201] (2012)
  • SUMIYA Masatomo ID: 9000107306958

    National Institute for Materials Science (2009 from CiNii)

    Articles in CiNii:1

    • Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers (2009)
  • SUMIYA Masatomo ID: 9000107324290

    Department of Electrical and Electronic Engineering, Shizuoka University (2004 from CiNii)

    Articles in CiNii:1

    • Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy (2004)
  • SUMIYA Masatomo ID: 9000241154259

    Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency (2012 from CiNii)

    Articles in CiNii:1

    • Application of III-V nitride films to photovoltaic devices (2012)
  • SUMIYA Masatomo ID: 9000241154313

    Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency (2012 from CiNii)

    Articles in CiNii:1

    • Application of III-V nitride films to photovoltaic devices (2012)
  • SUMIYA Masatomo ID: 9000241155799

    Wide-gap materials group, National Institute for Materials Science:JST-ALCA, Japan Science and Technology Agency (2012 from CiNii)

    Articles in CiNii:1

    • Application of III-V nitride films to photovoltaic devices (2012)
  • SUMIYA Masatomo ID: 9000253326640

    Department of Electrical and Electronic Engineering, Shizuoka University (1997 from CiNii)

    Articles in CiNii:1

    • Quantative analysis of photo-induced effect in amorphous silicon by laser desorption time of flight mass spectroscopy (1997)
  • SUMIYA Masatomo ID: 9000253327778

    Department of Electrical & Electronic Engineering, Shizuoka University (2001 from CiNii)

    Articles in CiNii:1

    • Polar surface structure of wurtzite GaN epitaxial film grown by MOCVD (2001)
  • Sumiya Masatomo ID: 9000258125446

    Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration. (1995)
  • Sumiya Masatomo ID: 9000258145427

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Hamamatsu 432–8561, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition. (1999)
  • Sumiya Masatomo ID: 9000258163224

    Department of Electrical & Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O3 (111) Substrate by Metalorganic Chemical Vapor Deposition. (2002)
  • Sumiya Masatomo ID: 9000283187309

    Department of Electrical and Electronic Engineering, Shizuoka University (2003 from CiNii)

    Articles in CiNii:1

    • Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co. (2003)
  • Sumiya Masatomo ID: 9000299561482

    Wide Bandgap Material Group, National Institute for Materials Science (NIMS) (2015 from CiNii)

    Articles in CiNii:1

    • Optical properties of Ga<sub>0.82</sub>In<sub>0.18</sub>N <i>p</i>-<i>n</i> homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy (2015)
  • Sumiya Masatomo ID: 9000401566196

    Articles in CiNii:1

    • Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition (2009)
  • Sumiya Masatomo ID: 9000401566944

    Articles in CiNii:1

    • Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes (2009)
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