Search Results1-7 of  7

  • Sun Chang-Zheng ID: 9000025041804

    Articles in CiNii:1

    • 40Gb/s AlGaInAs electroabsorption modulated laser module based on identical epitaxial layer scheme (2007)
  • SUN Chang-Zheng ID: 9000004824430

    State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University (2006 from CiNii)

    Articles in CiNii:6

    • Characteristics of n-GaN After Cl_2/Ar and Cl_2/N_2 Inductively Coupled Plasma Etching (2003)
    • Novel Planar Electrode Structure for High-Speed (>40GHz) Electroabsorption Modulators (2006)
    • Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on identical Epitaxial Layer Approach (2001)
  • Sun Chang-Zheng ID: 9000401686543

    Articles in CiNii:1

    • 2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure (1999)
  • Sun Chang-Zheng ID: 9000401692302

    Articles in CiNii:1

    • Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp (2000)
  • Sun Chang-Zheng ID: 9000401719826

    Articles in CiNii:1

    • Characteristics of n-GaN After Cl2/Ar and Cl2/N2Inductively Coupled Plasma Etching (2003)
  • Sun Chang-Zheng ID: 9000401754957

    Articles in CiNii:1

    • Novel Planar Electrode Structure for High-Speed (>40 GHz) Electroabsorption Modulators (2006)
  • Sun Chang-Zheng ID: 9000401766070

    Articles in CiNii:1

    • 40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme (2007)
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