Search Results1-20 of  59

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  • Saitoh Masumi ID: 9000018934440

    Articles in CiNii:1

    • Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Saitoh Masumi ID: 9000024980006

    Articles in CiNii:1

    • Low gate-induced drain leakage and its physical origins in Si nanowire transistors (Special issue: Solid state devices and materials) (2011)
  • Saitoh Masumi ID: 9000025016961

    Articles in CiNii:1

    • Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2010)
  • Saitoh Masumi ID: 9000025070145

    Articles in CiNii:1

    • Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Saitoh Masumi ID: 9000025077504

    Articles in CiNii:1

    • Characteristics of Defect Generation and Breakdown in SiO₂ for Polycrystalline Silicon Channel Field-Effect Transistor (Special Issue : Solid State Devices and Materials (2)) (2012)
  • SAITOH Masumi ID: 9000000488177

    Institute of Industrial Science, University of Tokyo (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots (2001)
  • SAITOH Masumi ID: 9000001454097

    Institute of Industrial Science, University of Tokyo (2005 from CiNii)

    Articles in CiNii:2

    • Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors (2005)
    • Room-Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors (2004)
  • SAITOH Masumi ID: 9000002166450

    Institute of Industrial Science, University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories (2004)
  • SAITOH Masumi ID: 9000002166743

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2005 from CiNii)

    Articles in CiNii:2

    • Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs (2004)
    • Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain (2005)
  • SAITOH Masumi ID: 9000002169147

    Institute of Industrial Science, University of Tokyo (2005 from CiNii)

    Articles in CiNii:1

    • Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor (2005)
  • SAITOH Masumi ID: 9000002169439

    Toshiba Corporation (2005 from CiNii)

    Articles in CiNii:2

    • Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement (2005)
    • Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs (2005)
  • SAITOH Masumi ID: 9000002407670

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2013 from CiNii)

    Articles in CiNii:31

    • Stress Engineering in (100) and (110) MOSFETs (2009)
    • Systematic Understanding of Self-Heating Effects in Tri-Gate Nanowire MOSFETs (2012)
    • Modulation of high-field carrier transport by strain in Si (110) and (100) CMOSFETs (2010)
  • SAITOH Masumi ID: 9000004509548

    Analysis Center, Hitachi Material Engineering Co. Ltd. (1996 from CiNii)

    Articles in CiNii:1

    • Determination of gases in thin solid films by inert gas fusion method (1996)
  • SAITOH Masumi ID: 9000004810213

    the Department of Electronic Engineering, The University of Tokyo (2001 from CiNii)

    Articles in CiNii:5

    • Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier (2000)
    • A Novel Effective-Channel-Length/External-Resistance Extraction Method for Small-Geometry MOSFET's (1994)
    • Photon-Induced Waveguides for All-Optical Switching and Wavelength Conversion (2000)
  • SAITOH Masumi ID: 9000004824902

    The authors are with Institute of Industrial Science, the University of Tokyo (2001 from CiNii)

    Articles in CiNii:1

    • Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot (2001)
  • SAITOH Masumi ID: 9000004893007

    Department of Electronic Engineering, University of Tokyo (2000 from CiNii)

    Articles in CiNii:9

    • Wavelength conversion using Fabry-Perot type semiconductor optical amplifier (2000)
    • Analysis of dynamic characteristics of wavelength converter based on Directionally Coupled Semiconductor Optical Amplifiers (1999)
    • Analysis of dynamic characteristics of wavelength converter based on Directionally Coupled Semiconductor Optical Amplifiers (1999)
  • SAITOH Masumi ID: 9000017504575

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2010 from CiNii)

    Articles in CiNii:3

    • Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs (2007)
    • Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport (2010)
    • Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport (2010)
  • SAITOH Masumi ID: 9000021648054

    Articles in CiNii:1

    • Room Temperature Operation of Silicon Single Electron Transistors Fabricated by Anisotropic Etching Technique (2001)
  • SAITOH Masumi ID: 9000107306020

    Institute of Industrial Science, University of Tokyo (2003 from CiNii)

    Articles in CiNii:1

    • Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors (2003)
  • SAITOH Masumi ID: 9000107322810

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs (2008)
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