Search Results1-13 of  13

  • SAITOH Motofumi ID: 9000002166168

    NEC Corporation, Device Platforms Research Laboratories (2007 from CiNii)

    Articles in CiNii:4

    • 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs (2004)
    • Influences of Traps within HfSiON Bulk on Positive- and Negative-Bias Temperature Instability of HfSiON Gate Stacks (2004)
    • Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs (2004)
  • SAITOH Motofumi ID: 9000004964709

    NEC Corporation (2008 from CiNii)

    Articles in CiNii:5

    • Practical Vth Control Methods for Ni-FUSI/HfSiON MOSFETs on SOI Substrates (2007)
    • Integration Technology of PC-FUSI (Phase Controlled FUSI) HfSiON Gate Stack for Embedded Memory Application (2008)
    • Poly-Si/HfSiO/SiO_2ゲート構造を用いた低電力、高速HfSiOゲート CMOS FET (2004)
  • SAITOH Motofumi ID: 9000107344097

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • SAITOH Motofumi ID: 9000107344135

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • SAITOH Motofumi ID: 9000107344268

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Saitoh Motofumi ID: 9000258180934

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • Saitoh Motofumi ID: 9000258181105

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Saitoh Motofumi ID: 9000258181160

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs (2005)
  • Saitoh Motofumi ID: 9000401735758

    Articles in CiNii:1

    • 1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • Saitoh Motofumi ID: 9000401735825

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Saitoh Motofumi ID: 9000401735907

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2CMOSFETs (2005)
  • Saitoh Motofumi ID: 9000401768299

    Articles in CiNii:1

    • 2008-04-25 (2008)
  • Saitoh Motofumi ID: 9000402020715

    Articles in CiNii:1

    • In-situ electron holography of carrier accumulation at SiO2/InGaZnO4interface (2014)
Page Top