Search Results1-20 of  75

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  • SANO Nobuyuki ID: 9000404508464

    Institute of Applied Physics, University of Tsukuba (2007 from CiNii)

    Articles in CiNii:1

    • Quasi-ballistic electron transport in nanoscale semiconductor structures (2007)
  • Sano Nobuyuki ID: 9000403859368

    Articles in CiNii:1

    • Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics (2010)
  • Sano Nobuyuki ID: 9000403865732

    Articles in CiNii:1

    • Impact of the Coulomb interaction on nano-scale silicon device characteristics (2011)
  • Sano Nobuyuki ID: 9000403871607

    Articles in CiNii:1

    • Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations (2014)
  • Sano Nobuyuki ID: 9000403875470

    Articles in CiNii:1

    • Impurity-limited resistance and phase interference of localized impurities under quasi-one dimensional nano-structures (2015)
  • Sano Nobuyuki ID: 9000403876368

    Articles in CiNii:1

    • Phase interference due to multiple impurities and space-average resistance in quasi-one-dimensional nanowires (2016)
  • Sano Nobuyuki ID: 9000403907936

    Articles in CiNii:1

    • Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors (2001)
  • Sano Nobuyuki ID: 9000403907939

    Articles in CiNii:1

    • Drift-velocity degradation caused by an electric field during collision in one-dimensional quantum wires (1996)
  • Sano Nobuyuki ID: 9000403907942

    Articles in CiNii:1

    • Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature? (2004)
  • Sano Nobuyuki ID: 9000403908600

    Articles in CiNii:1

    • Thickness dependence of the effective dielectric constant in a thin film capacitor (1998)
  • Sano Nobuyuki ID: 9000403908621

    Articles in CiNii:1

    • Scaling limit of digital circuits due to thermal noise (1998)
  • Sano Nobuyuki ID: 9000403910544

    Articles in CiNii:1

    • Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy (2004)
  • Nobuyuki SANO ID: 9000403971419

    Articles in CiNii:1

    • Physics of Discrete Impurities under the Frameworkof Device Simulations for Nanostructure Devices (2018)
  • SANO NOBUYUKI ID: 9000006573821

    Tokyo Research Laboratories, Kowa Company, Ltd. (1977 from CiNii)

    Articles in CiNii:1

    • Pharmacological Studies on Prazepam (1977)
  • SANO Nobuyuki ID: 1000090282334

    Institute of Applied Physics, University of Tsukuba (2002 from CiNii)

    Articles in CiNii:14

    • Device simulation and its physics (2002)
    • Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs (1999)
    • Device-Size Dependence of Current Fluctuation Simulation under Ultra-Small Device Structures (1998)
  • SANO Nobuyuki ID: 9000001037100

    Institute of Applied `jusocs, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors (2003)
  • SANO Nobuyuki ID: 9000001152940

    Departments of Pediatric Surgery, Tohoku University School of Medicine (2001 from CiNii)

    Articles in CiNii:4

    • E-cadherin, α-catenin and β-catenin in biliary atresia : Correlation with apoptosis and cell cycle (2001)
    • Abnormal Distribution of Nerve Fibers in the Liver of Biliary Atresia (1997)
    • Clinical Significance of ^<99m>Tc-DTPA Galactosyl Human Serum Albumin Scintigram in Follow-up after Kasai Operation (1997)
  • SANO Nobuyuki ID: 9000001506417

    Institute of Applied Physics, University of Tsukuba (2001 from CiNii)

    Articles in CiNii:1

    • Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude (2001)
  • SANO Nobuyuki ID: 9000001628682

    Faculty of Pure and Applied Sciences, Division of Applied Physics, University of Tsukuba (2013 from CiNii)

    Articles in CiNii:6

    • Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices (2005)
    • Quasi-ballistic electron transport in nanoscale semiconductor structures (2007)
    • Monte Carlo Method for Advanced Semiconductor Devices (2009)
  • SANO Nobuyuki ID: 9000001719235

    Institute of Applied Physics, University of Tsukuba (2000 from CiNii)

    Articles in CiNii:1

    • Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations (2000)
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