Search Results1-20 of  67

  • 1 / 4
  • SARAIE JUNJI ID: 9000256195641

    College of Technology, Kyoto Institute of Technology (1983 from CiNii)

    Articles in CiNii:1

    • Amorphous Materials (1983)
  • SARAIE Junji ID: 9000005544156

    Department of Electronics and Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:8

    • GaN_yAs_<1-x-y>Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission (2004)
    • Li Planar Doping of ZnSe by Molecular Beam Epitaxy (1995)
    • Fabrication of CdSe/ZnSe Quantum well Structures on Glass Substrates by Vacuum Evaporation (1996)
  • SARAIE Junji ID: 9000107321283

    Department of Electronics Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiN_x Layers (2004)
  • SARAIE Junji ID: 9000107334187

    Department of Electronics and Information Science, Kyoto Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy (2001)
  • SARAIE Junji ID: 9000107338679

    Department of Electronics and Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source (2004)
  • SARAIE Junji ID: 9000107349737

    Department of Electronics and Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy (2004)
  • SARAIE Junji ID: 9000107362063

    Department of Electronics and Information Science, Kyoto Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices (2001)
  • SARAIE Junji ID: 9000107362474

    Department of Electronics and Information Science, Kyoto Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Direct Observation of Polytype Domains in GaN using a Cryogenic Scanning Photoluminescence Microscope with Sub-Micron Spatial Resolution (2001)
  • SARAIE Junji ID: 9000107391559

    Department of Electronics and Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Dense Structure of SiN_x Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane (2004)
  • SARAIE Junji ID: 9000107391722

    Department of Electronics and Information Science, Kyoto Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy (2003)
  • SARAIE Junji ID: 9000252845140

    Technical College, Kyoto Institute of Technology. (1988 from CiNii)

    Articles in CiNii:1

    • Lattice-Matched Epitaxy of ZnSSe on GaAs Substrates (1988)
  • SARAIE Junji ID: 9000253321983

    京都大学工学部電子工学教室 (1980 from CiNii)

    Articles in CiNii:1

    • Behaviour of Phosphorus Impurities in CdTe (1980)
  • SARAIE Junji ID: 9000253648484

    Faculty of Engineering and Design, Kyoto Institute of Technology (1994 from CiNii)

    Articles in CiNii:1

    • CAICISS Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method. (1994)
  • SARAIE Junji ID: 9000253649291

    Faculty of Engineering and Design, Kyoto Institute of Technology (1998 from CiNii)

    Articles in CiNii:1

    • Atomic Layer Control on the Topmost Layers of Single Crystals by CAICISS(Coaxial Impact Collision Ion Scattering Spectroscopy). (1998)
  • Saraie Junji ID: 9000066816364

    Articles in CiNii:1

    • Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy (2006)
  • Saraie Junji ID: 9000252762906

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology (1990 from CiNii)

    Articles in CiNii:1

    • Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy (1990)
  • Saraie Junji ID: 9000252765889

    Articles in CiNii:1

    • Photo-Chemical Vapor Deposition of Al<SUB>2</SUB>O<SUB>3</SUB> Thin Films with High Quantum Yield (1992)
  • Saraie Junji ID: 9000252938834

    Department of Electronic Engineering, Faculty of Engineering, Kyoto University (1972 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of CdTe by a Close-Spaced Technique (1972)
  • Saraie Junji ID: 9000252939595

    Articles in CiNii:1

    • Optical Energy Gap of the Mixed Crystal CdS<I><SUB>x</SUB></I>Te<SUB>1−<I>x</I></SUB> (1973)
  • Saraie Junji ID: 9000252940189

    Articles in CiNii:1

    • Epitaxial Growth of Cd<I><SUB>x</SUB></I>Hg<SUB>1−<I>x</I></SUB>Te (1973)
  • 1 / 4
Page Top