Search Results1-20 of  76

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  • Sasa Shigehiko ID: 9000025038356

    Articles in CiNii:1

    • Performance and stability of ZnO/ZnMgO hetero-metal-insulator-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • SASA Shigehiko ID: 9000000488145

    Department of Electrical Engineering, Osaka Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • A Single-Electron Transistor Produced by Nanoscale Oxidation of InAs (2001)
  • SASA Shigehiko ID: 9000003297137

    Department of Electrical Engineering,Faculty of Engineering,Osaka University (1980 from CiNii)

    Articles in CiNii:1

    • Electrical Resistivity and Negative Magnetoresistance in (SNBr_γ)_x Crystal (1980)
  • SASA Shigehiko ID: 9000003312976

    Nanomaterials Microdevices Research Center, Osaka Institute of Technology (2009 from CiNii)

    Articles in CiNii:9

    • Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn_<0.6>Mg_<0.4>O Heterointerface (2004)
    • Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates (2009)
    • Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects (1989)
  • SASA Shigehiko ID: 9000003403281

    Nanomaterials Microdevices Res. Center, Osaka Institute of Technology (2014 from CiNii)

    Articles in CiNii:15

    • 3a-G-5 (SN)_x及びdoped(SN)_xの電気的性質 (1980)
    • 2a-NE-1 (SN)_xの超伝導特性および極低温における磁気抵抗効果 (1981)
    • 31p-K-12 (SN)_xの磁気抵抗効果と電子状態 (1982)
  • SASA Shigehiko ID: 9000107341638

    New Materials Research Center, Osaka Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of Al-doped ZnMgO Alloy Films for Modulation-doped ZnO/ZnMgO Heterostructures (2005)
  • SASA Shigehiko ID: 9000107374254

    New Materials Research Center, Osaka Institute of Technology (1998 from CiNii)

    Articles in CiNii:1

    • Characteristics of Self-Assembled InSb Dots Grown on (100) AlGaSb by Molecular Beam Epitaxy (1998)
  • SASA Shigehiko ID: 9000403276895

    Nanomaterials Microdevices Research Center (2019 from CiNii)

    Articles in CiNii:1

    • Development of Zinc Oxide Thin Films and Their Device Applications (2019)
  • SASA ` Shigehiko ID: 1000050278561

    Articles in CiNii:54

    • Molecular Beam Epitaxial Growth of the Single Crystalline ZnO Films on Silicon Substrates (2002)
    • Molecular Beam Epitaxial Growth of the Zn_<1-x>Mg_xO Films on Silicon Substrates (2004)
    • Alloying at ZnS/ZnO Heterointerface Grown by Molecular Beam Epitaxy (2005)
  • Sasa Shigehiko ID: 9000242871014

    Nanomaterials Microdevices Research Center, Osaka Institute of Technology (2018 from CiNii)

    Articles in CiNii:11

    • MgCr₂O₄-TiO₂系P型半導体セラミックスによる直熱型ガスセンサ (電子デバイス) (2015)
    • Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method (2017)
    • Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method (2017)
  • Sasa Shigehiko ID: 9000252759002

    FUJITSU LABORATORIES LIMITED (1985 from CiNii)

    Articles in CiNii:1

    • Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE (1985)
  • Sasa Shigehiko ID: 9000252759465

    Fujitsu Laboratories Ltd. (1986 from CiNii)

    Articles in CiNii:1

    • MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source (1986)
  • Sasa Shigehiko ID: 9000252759505

    Fujitsu Limited (1986 from CiNii)

    Articles in CiNii:1

    • Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure (1986)
  • Sasa Shigehiko ID: 9000252760040

    FUJITSU LABORATORIES LIMITED (1987 from CiNii)

    Articles in CiNii:1

    • Extremely High 2DEG Concentration in Selectively Doped In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As/N–In<SUB>0.52</SUB>Al<SUB>0.48</SUB>As Heterostructures Grown by MBE (1987)
  • Sasa Shigehiko ID: 9000252760285

    Fujitsu Laboratories Ltd. (1987 from CiNii)

    Articles in CiNii:1

    • A Pseudomorphic In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature (1987)
  • Sasa Shigehiko ID: 9000252760957

    Fujitsu Laboratories Ltd. (1988 from CiNii)

    Articles in CiNii:1

    • Selectively Doped GaAs/N-Al<SUB>0.3</SUB>Ga<SUB>0.7</SUB>As Heterostructures Grown by Gas-Source MBE (1988)
  • Sasa Shigehiko ID: 9000252762179

    Fujitsu Laboratories Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures (1990)
  • Sasa Shigehiko ID: 9000252951726

    Fujitsu Laboratories Ltd. (1982 from CiNii)

    Articles in CiNii:1

    • Electrical Properties of Si-Doped Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>As Layers Grown by MBE (1982)
  • Sasa Shigehiko ID: 9000252952261

    Articles in CiNii:1

    • Formation of Semiconductive Metal-Sulfide at Interface of (SN)<I><SUB>x</SUB></I>-Metal Junction (1982)
  • Sasa Shigehiko ID: 9000252955614

    Fujitsu Laboratorites Limited (1984 from CiNii)

    Articles in CiNii:1

    • Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE (1984)
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