Search Results1-13 of  13

  • SAWAMOTO Naomi ID: 9000404639661

    Meiji University (2019 from CiNii)

    Articles in CiNii:1

    • Fabrication of 2D Layered Materials by Sputtering Deposition (2019)
  • Sawamoto Naomi ID: 9000307256138

    Articles in CiNii:4

    • ZrO₂/Al₂O₃/ZrO₂多層を用いたDRAMキャパシタにおけるAl₂O₃層が電気特性に及ぼす効果 (シリコン材料・デバイス) (2016)
    • TFT応用に向けたRFマグネトロンスパッタリング法によるMoS₂膜の形成 (シリコン材料・デバイス) (2016)
    • ZrO₂シード層がHf[x]Zr1-xO₂薄膜の強誘電性へ及ぼす効果 (シリコン材料・デバイス) (2017)
  • Sawamoto Naomi ID: 9000398982727

    Meiji University (2018 from CiNii)

    Articles in CiNii:1

    • Fabrication of 2D Layered Material by Sputtering Deposition (2018)
  • Sawamoto Naomi ID: 9000401980511

    Articles in CiNii:1

    • Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness (2017)
  • Sawamoto Naomi ID: 9000401981322

    Articles in CiNii:1

    • 2017-07-13 (2017)
  • Sawamoto Naomi ID: 9000402019776

    Articles in CiNii:1

    • Ge2Sb2Te5Film Fabrication by Tellurization of Chemical Vapor Deposited GeSb (2013)
  • Sawamoto Naomi ID: 9000402022349

    Articles in CiNii:1

    • Detailed study of the effects of interface properties of ozone-based atomic layer deposited AlOxon the surface passivation of crystalline silicon (2014)
  • Sawamoto Naomi ID: 9000402026372

    Articles in CiNii:1

    • 2014-10-02 (2014)
  • Sawamoto Naomi ID: 9000402029157

    Articles in CiNii:1

    • Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs (2015)
  • Sawamoto Naomi ID: 9000402035338

    Articles in CiNii:1

    • Improving crystalline quality of sputtering-deposited MoS2thin film by postdeposition sulfurization annealing using (t-C4H9)2S2 (2016)
  • Sawamoto Naomi ID: 9000402036716

    Articles in CiNii:1

    • Properties of single-layer MoS2film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2 (2016)
  • Sawamoto Naomi ID: 9000402038778

    Articles in CiNii:1

    • Biaxial stress evaluation in GeSn film epitaxially grown on Ge substrate by oil-immersion Raman spectroscopy (2016)
  • Sawamoto Naomi ID: 9000402049087

    Articles in CiNii:1

    • 2018-05-16 (2018)
Page Top