Search Results1-20 of  144

  • SEKI Hisashi ID: 9000005524750

    Faculty of Technology, Tokyo University of Agriculture and Technology (1972 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Calculation for the Vapor Growth of In_xGa_<1-_x>As: The In-Ga-As-Cl-H System (1972)
  • SEKI Hisashi ID: 9000005528432

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (2001 from CiNii)

    Articles in CiNii:22

    • Investigation of Buffer Iayer of Cubic GaN Epitaxial Films on (100)GaAs Grown by Metalorganic-Hydrogen Chloride Vapor-Phase Epitaxy (1996)
    • Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN (1998)
    • Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method (1999)
  • SEKI Hisashi ID: 9000005531553

    Faculty of Technology, Tokyo University of Agriculture and Technology (1977 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System (1977)
  • SEKI Hisashi ID: 9000005537563

    Faculty of Technology, Tokyo University of Agriculture and Technology (1968 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube (1968)
  • SEKI Hisashi ID: 9000005732822

    Faculty of Technology, Tokyo University of Agriculture and Technology (1979 from CiNii)

    Articles in CiNii:1

    • The Electrical Properties of VPE GaAs Grown by the Single Flat Temperature Zone Method (1979)
  • SEKI Hisashi ID: 9000045932862

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (1996 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Analysis of In_xGa_<1-x>N Alloy Composition Grown by Metalorganic Vapor Phase Epitaxy (1996)
  • SEKI Hisashi ID: 9000252845533

    Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology. (1994 from CiNii)

    Articles in CiNii:1

    • Atomic-layer epitaxy of III-V alloy semiconductors (1994)
  • SEKI Hisashi ID: 9000256415868

    東京農工大学工学部工業化学科 (1966 from CiNii)

    Articles in CiNii:1

    • Aqueous Bicarbonate-Oxalate as Leaching Reagent for Japanese Uranium Ores (1966)
  • SEKI Hisashi ID: 9000256417873

    東京農工大学工学部工業化学科 (1968 from CiNii)

    Articles in CiNii:1

    • Extraction of Uranium (VI) from Aqueous Oxalate Solution with High Molecular Weight Amine (1968)
  • Seki Hisashi ID: 1000070015022

    Tomoe Shokai Co., Ltd. (2005 from CiNii)

    Articles in CiNii:32

    • Atomic-layer epitaxy of III-V alloy semiconductors (1994)
    • Thermodynamic analysis of compound semiconductors by vapor phase epitaxy (2005)
    • Thermodynamic Study of InGaN growth by MOVPE (1997)
  • Seki Hisashi ID: 9000252755009

    Faculty of Technology, Tokyo University of Agriculture and Technology (1971 from CiNii)

    Articles in CiNii:1

    • Vapor Transport of Gallium in the Ga-PCl<SUB>3</SUB>-H<SUB>2</SUB> System (1971)
  • Seki Hisashi ID: 9000252755171

    Faculty of Technology, Tokyo University of Agriculture and Technology (1972 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Calculation for the Vapor Growth of In<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>As: The In-Ga-As-Cl-H System (1972)
  • Seki Hisashi ID: 9000252755401

    Faculty of Technology, Tokyo University of Agriculture and Technology (1973 from CiNii)

    Articles in CiNii:1

    • A New Vapor Growth Method for GaP Using a Single Flat Temperature Zone (1973)
  • Seki Hisashi ID: 9000252756214

    Faculty of Technology, Tokyo University of Agriculture and Technology (1977 from CiNii)

    Articles in CiNii:1

    • The Residual Doping Level in VPE GaAs Grown by the Single Flat Temperature Zone Method (1977)
  • Seki Hisashi ID: 9000252758273

    Department of Industrial Chemistry, Tokyo University of Agriculture and Technology (1984 from CiNii)

    Articles in CiNii:1

    • Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method (1984)
  • Seki Hisashi ID: 9000252758722

    Department of Industrial Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (1985 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Calculation of the VPE Growth of In<SUB>1−<I>x</I></SUB>Ga<I><SUB>x</SUB></I>As<I><SUB>y</SUB></I>P<SUB>1−<I>y</I></SUB> by the Trichloride Method (1985)
  • Seki Hisashi ID: 9000252760876

    Department of Industrial Chemistry, Tokyo University of Agriculture and Technology (1988 from CiNii)

    Articles in CiNii:1

    • Solid Composition of In<SUB>1−<I>x</I></SUB>Ga<I><SUB>x</SUB></I>As Grown by the Halogen Transport Atomic Layer Epitaxy (1988)
  • Seki Hisashi ID: 9000252761133

    Department of Industrial Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology (1988 from CiNii)

    Articles in CiNii:1

    • Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl<SUB>3</SUB> and AsH<SUB>3</SUB> System (1988)
  • Seki Hisashi ID: 9000252762534

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (1990 from CiNii)

    Articles in CiNii:1

    • Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H<SUB>2</SUB>Se (1990)
  • Seki Hisashi ID: 9000252762557

    Department of Applied Chemistry, Tokyo University of Agriculture and Technology (1990 from CiNii)

    Articles in CiNii:1

    • Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy (1990)
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