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  • SERI Yasuhiro ID: 9000001097920

    Department of Functional Materials Science, Faculty of Engineering, Saitama University (2003 from CiNii)

    Articles in CiNii:1

    • Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiCl4-and-H2 Mixture (2003)
  • SERI Yasuhiro ID: 9000002171463

    Japan Advanced Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition (2005)
  • Seri Yasuhiro ID: 9000059271112

    Articles in CiNii:1

    • Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen (2006)
  • Seri Yasuhiro ID: 9000258163756

    Department of Functional Materials Science, Faculty of Engineering, Saitama University (2003 from CiNii)

    Articles in CiNii:1

    • Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiCl4-and-H2 Mixture (2003)
  • Seri Yasuhiro ID: 9000401721755

    Articles in CiNii:1

    • Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiCl4-and-H2Mixture (2003)
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