Search Results1-7 of  7

  • Shiba Shoichi ID: 9000241499664

    Articles in CiNii:1

    • 93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials) (2013)
  • SHIBA Shoichi ID: 9000018630636

    Articles in CiNii:20

    • Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications (2015)
    • Millimeter-Wave/Sub-Millimeter-Wave Monolithic ICs in 75-nm InP HEMT Technology for Short-range Multi-10-Gps Wireless Communications (2016)
    • Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs (2016)
  • SHIBA Shoichi ID: 9000022090245

    日本栄養科学研究部 (1956 from CiNii)

    Articles in CiNii:1

    • Study on the liquid medium of tubercle bacilli (1956)
  • SHIBA Shoichi ID: 9000311504736

    Network Products Business Unit, Fujitsu Limited|Devices & Materials Laboratories, Fujitsu Laboratories Ltd. (2015 from CiNii)

    Articles in CiNii:1

    • Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis (2015)
  • SHIBA Shoichi ID: 9000322101742

    Fujitsu Limited|Fujitsu Laboratories Ltd. (2016 from CiNii)

    Articles in CiNii:1

    • 300-GHz Amplifier in 75-nm InP HEMT Technology (2016)
  • Shiba Shoichi ID: 9000401980240

    Articles in CiNii:1

    • Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors (2017)
  • Shiba Shoichi ID: 9000402013784

    Articles in CiNii:1

    • 2013-04-01 (2013)
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